MLD1N06CL ON Semiconductor, MLD1N06CL Datasheet

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MLD1N06CL

Manufacturer Part Number
MLD1N06CL
Description
MOSFET
Manufacturer
ON Semiconductor
Datasheet

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MLD1N06CL
SMARTDISCRETESt MOSFET
1 Amp, 62 Volts, Logic Level
N−Channel DPAK
power switching device with short circuit protection that can be
directly interfaced to a microcontrol unit (MCU). Ideal applications
include automotive fuel injector driver, incandescent lamp driver or
other applications where a high in−rush current or a shorted load
condition could occur.
short circuit protection, integrated Gate−Source clamping for ESD
protection and integral Gate−Drain clamping for over−voltage
protection and Sensefet technology for low on−resistance. No
additional gate series resistance is required when interfacing to the
output of a MCU, but a 40 kW gate pulldown resistor is recommended
to avoid a floating gate condition.
to be applied without use of external transient suppression
components. The Gate−Source clamp protects the MOSFET input
from electrostatic voltage stress up to 2.0 kV. The Gate−Drain clamp
protects the MOSFET drain from the avalanche stress that occurs with
inductive loads. Their unique design provides voltage clamping that is
essentially independent of operating temperature.
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR−4 board using the minimum recommended
2. When surface mounted to an FR−4 board using the 0.5 sq.in. drain pad size.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 3
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage
Drain Current
Total Power Dissipation
Operating and Storage Temperature Range
Electrostatic Discharge Voltage
Thermal Resistance
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 5 seconds
The MLD1N06CL is designed for applications that require a rugged
This Logic Level Power MOSFET features current limiting for
The internal Gate−Source and Gate−Drain clamps allow the device
Pb−Free Package is Available
pad size.
(Human Model)
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
− Continuous
− Continuous
− Single Pulse
Rating
(T
GS
J
= 25°C unless otherwise noted)
= 1.0 MW)
Preferred Device
Symbol
T
V
V
R
ESD
R
R
V
J
I
P
DGR
, T
T
DSS
DM
I
qJC
qJA
qJA
GS
D
D
L
stg
Self−limited
−50 to 150
Clamped
Clamped
Value
3.12
71.4
±10
100
260
1.8
2.0
40
1
°C/W
Unit
Vdc
Vdc
Vdc
Adc
Apk
°C
kV
°C
W
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
MLD1N06CLT4
MLD1N06CLT4G
62 V (Clamped)
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1 2
V
Device
(BR)DSS
3
ORDERING INFORMATION
G
Y
WW
L1N06C
G
4
http://onsemi.com
CASE 369C
STYLE 2
(Pb−Free)
Package
N−Channel
R
R1
DPAK
DPAK
DPAK
DS(on)
750 mW
= Year
= Work Week
= Device Code
= Pb−Free Package
Publication Order Number:
TYP
R2
2500 Tape & Reel
2500 Tape & Reel
MARKING
DIAGRAM
D
S
MLD1N06CL/D
Shipping
06CG
YWW
I
D
L1N
1.0 A
MAX

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MLD1N06CL Summary of contents

Page 1

... SMARTDISCRETESt MOSFET 1 Amp, 62 Volts, Logic Level N−Channel DPAK The MLD1N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU). Ideal applications include automotive fuel injector driver, incandescent lamp driver or other applications where a high in− ...

Page 2

... Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperature. MLD1N06CL = 25° 25°C unless otherwise noted ...

Page 3

... Without some form of current limiting, a shorted load can raise a device’s junction temperature beyond the maximum rated operating temperature in only a few milliseconds. Even with no heatsink, the MLD1N06CL can withstand a shorted load powered by an automotive battery ( for almost a second if its initial operating temperature is under 100° ...

Page 4

... Figure 3. I Variation D(lim) With Temperature 1.25 1 0.75 0.5 0.25 −50 100 100 T , JUNCTION TEMPERATURE (°C) J Figure 6. Single Pulse Avalanche Energy versus Junction Temperature MLD1N06CL 7 100 150 V Figure 100 T , JUNCTION TEMPERATURE (° ...

Page 5

... Thermal Resistance − General Data and Its Use” provides detailed instructions. MAXIMUM DC VOLTAGE CONSIDERATIONS The maximum drain−to−source voltage that can be continuously applied across the MLD1N06CL when current limit is a function of the power that must be dissipated. This power is determined by the maximum current limit at maximum rated operating temperature 10 1 ...

Page 6

... To achieve high gate−to−drain clamp voltages, several voltage elements are strung together; the MLD1N06CL uses 8 such elements. Customarily, two voltage elements are used to provide a 14.4 V gate−to−source voltage clamp. For the ...

Page 7

... V 0.035 0.050 0.89 Z 0.155 −−− 3.93 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 6.172 0.243 mm inches ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MLD1N06CL/D MAX 6.22 6.73 2.38 0.88 0.58 1.14 1.01 0.58 2.89 5.45 1.01 −−− 1.27 −−− ...

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