CLD370F Clairex, CLD370F Datasheet
CLD370F
Manufacturer Part Number
CLD370F
Description
Plastic PIN Photodiode
Manufacturer
Clairex
Datasheet
1.CLD370F.pdf
(1 pages)
www.DataSheet4U.com
DataSheet U .com
4
CLD370F
Plastic PIN Photodiode
features
description
Note:
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
• fast switching speed
• low junction capacitance
• 850 nm peak response
• large photosensitive area
• sharp cutoff to visible wavelengths
• ± 30° acceptance angle
electrical characteristics (TA = 25°C unless otherwise noted)
The CLD370F is a high gain silicon
photodiode mounted in a T-1¾ (5mm)
dark plastic package. The chip has an
active area of approximately 0.080"
x 0.080" (4 square mm) and
is intended for use as an infrared
sensor. The dark tinting of the
package effectively attenuates
wavelengths shorter than 700nm
eliminating most visible light
interference.
symbol
V
Θ
t
I
V
C
r
I
SC
, t
D
BR
HP
O
J
f
1. Radiation source is an aluminum gallium arsenide IRED operating at a peak wavelength of 850nm.
Clairex Technologies, Inc.
Phone: 972-265-4900
parameter
Short-circuit current
Dark current
Reverse breakdown
Junction capacitance
Open circuit voltage
Total angle at half sensitivity points
Output rise and fall time
(1)
(1)
absolute maximum ratings (T
notes:
storage temperature……………………………………………………-40°C to +125°C
operating temperature………………………………………………… -40°C to +100°C
lead soldering temperature
continuous power dissipation
1.
2.
3.
ALL DIMENSIONS ARE IN INCHES (MILLIMETERS)
0.06” (1.5mm) from the header for 5 seconds maximum
Derate linearly 1.6mW/°C from 25°C free air temperature to T
Protruding resin under flange is 0.06" (1.5mm) max.
0.20 (5.05)
1301 East Plano Parkway
Fax: 972-265 4949
min
5.0
30
-
-
-
-
-
-
0.290 (7.37)
0.310 (7.87)
10.0
60.0
350
typ
25
60
30
-
-
(1)
………………………………………………………260°C
(2)
A
= 25°C unless otherwise stated)
…………………………………………………150mW
All dimensions are in inches (mm).
1.0 (25.4) min.
ANODE
CATHODE
max
0.040 (1.02)
30
-
-
-
-
-
-
-
See Note 3
0.06 (1.5) max.
units
deg.
mV
µA
µA
nA
pF
ns
Plano, Texas 75074-8524
V
test conditions
V
V
V
I
V
E
R
0.23 (5.9)
R
www.clairex.com
R
R
R
R
e
L
= 100µA, E
= 0.1mW/cm
= 1kΩ, V
®
= 5V, E
= 5V, E
= 10V, E
= 3V, E
0.020 (0.50) sq. nom.
Clairex
Technologies, Inc.
A
December, 2001
e
e
e
Revised 3/15/06
= +100°C.
e
R
= 0.1mW/cm
= 1.0mW/cm
= 0. f = 1MHz
0.100 (2.54) nom.
= 0
e
= 10V
= 0
2
2
2
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