NTNS3A65PZ ON Semiconductor, NTNS3A65PZ Datasheet

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NTNS3A65PZ

Manufacturer Part Number
NTNS3A65PZ
Description
Small Signal MOSFET
Manufacturer
ON Semiconductor
Datasheet

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Part Number:
NTNS3A65PZT5G
Manufacturer:
ON Semiconductor
Quantity:
6 350
Part Number:
NTNS3A65PZT5G
Manufacturer:
ON/安森美
Quantity:
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Quantity:
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NTNS3A65PZ
Small Signal MOSFET
−20 V, −281 mA, Single P−Channel,
SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm
Package
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using the minimum recommended pad size,
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Pulsed Drain
Current
Operating Junction and Storage
Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Extremely Thin Environments Such as Portable Electronics
Compliant
Single P−Channel MOSFET
Ultra Low Profile SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm for
Low R
1.5 V Gate Drive
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
High Side Switch
High Speed Interfacing
Optimized for Power Management in Ultra Portable Solutions
or 2 mm
DS(on)
2
, 1 oz Cu.
Solution in the Ultra Small 1.0 x 0.6 mm Package
Parameter
Steady
Steady
(T
t ≤ 5 s
t ≤ 5 s
State
State
J
= 25°C unless otherwise stated)
t
p
= 10 ms
T
T
T
T
A
A
A
A
= 25°C
= 85°C
= 25°C
= 25°C
T
Symbol
J
V
V
, T
I
P
DSS
DM
T
I
I
GS
D
S
D
L
STG
−55 to
Value
−281
−202
−332
−842
−130
−20
155
218
150
260
±8
1
www.DataSheet.net/
Unit
mW
mA
mA
mA
°C
°C
V
V
†For information on tape and reel specifications,
NTNS3A65PZT5G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
V
3
(BR)DSS
−20 V
Device
G (1)
2
ORDERING INFORMATION
1
65
M
P−CHANNEL MOSFET
http://onsemi.com
http://onsemi.com
SOT−883 (XDFN3)
1.3 W @ −4.5 V
3.4 W @ −1.8 V
2.0 W @ −2.5 V
4.5 W @ −1.5 V
CASE 506CB
R
DS(on)
= Specific Device Code
= Date Code
(Pb−Free)
SOT−883
Package
Publication Order Number:
S (2)
D (3)
MAX
NTNS3A65PZ/D
8000 / Tape &
Shipping
MARKING
DIAGRAM
−281 mA
Reel
I
D
65 M
Max
Datasheet pdf - http://www.DataSheet4U.co.kr/

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NTNS3A65PZ Summary of contents

Page 1

... W @ −1 −1.5 V P−CHANNEL MOSFET S (2) D (3) MARKING DIAGRAM SOT−883 (XDFN3 CASE 506CB Specific Device Code M = Date Code ORDERING INFORMATION † Package Shipping SOT−883 8000 / Tape & (Pb−Free) Reel Publication Order Number: NTNS3A65PZ/D Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

Page 2

... Gate−to−Source Charge Gate−to−Drain Charge SWITCHING CHARACTERISTICS 4.5 V (Note 4) GS Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time 4. Switching characteristics are independent of operating junction temperatures NTNS3A65PZ Symbol 25°C unless otherwise stated) Symbol Test Condition − ...

Page 3

... GATE−TO−SOURCE VOLTAGE (V) GS Figure 3. On−Resistance vs. Gate Voltage 1.6 1 −4 1 −200 mA D 1.3 1.2 1.1 1.0 0.9 0.8 0.7 −50 − JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature NTNS3A65PZ TYPICAL CHARACTERISTICS 1 −5 V 0.9 DS 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 2.5 3.0 0 0.5 −V , GATE−TO−SOURCE VOLTAGE (V) GS Figure 2. Transfer Characteristics 5 25°C 4 − ...

Page 4

... R , GATE RESISTANCE (W) G Figure 9. Resistive Switching Time Variation vs. Gate Resistance 0.90 0. −250 mA D 0.70 0.60 0.50 0.40 −50 − STARTING JUNCTION TEMPERATURE (°C) J Figure 11. Threshold Voltage NTNS3A65PZ TYPICAL CHARACTERISTICS 25° MHz ...

Page 5

... Duty Cycle = 0.5 400 0.05 300 0.02 0.01 200 0.2 0.1 100 0 0.000001 0.00001 0.0001 NTNS3A65PZ TYPICAL CHARACTERISTICS Single Pulse 0.001 0.01 0.1 PULSE TIME (sec) Figure 13. Thermal Response www.DataSheet.net/ http://onsemi.com 5 R steady state = 804°C/W qJA 1 10 100 1000 Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

Page 6

... A1 0.000 0.030 b 0.075 0.200 D 0.950 1.075 D2 0.620 BSC e 0.350 BSC E 0.550 0.675 E2 0.425 0.550 L 0.170 0.300 1.10 0.41 0.55 PACKAGE OUTLINE DIMENSIONS: MILLIMETERS ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTNS3A65PZ/D Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

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