C1318 Panasonic Semiconductor, C1318 Datasheet
C1318
Manufacturer Part Number
C1318
Description
Search -----> 2SC1318
Manufacturer
Panasonic Semiconductor
Datasheet
1.C1318.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
C1318
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Company:
Part Number:
C1318-Y
Manufacturer:
TOSHIBA
Quantity:
12 000
Transistors
2SC1317, 2SC1318
Silicon NPN epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SA719 and 2SA720
I Features
I Absolute Maximum Ratings T
I Electrical Characteristics T
Note) * 1: Pulse measurement
• Low collector to emitter saturation voltage V
• Complementary pair with 2SA719 and 2SA720
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector cutoff current
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
* 2: Rank classification
Parameter
Parameter
Rank
h
FE1
2SC1317
2SC1318
2SC1317
2SC1318
2SC1317
2SC1318
2SC1317
2SC1318
85 to 170
Q
* 1
* 1
* 1
Symbol
V
V
V
T
I
P
I
T
CBO
CEO
EBO
CP
stg
C
C
a
j
Symbol
V
V
= 25°C ± 3°C
120 to 240
V
V
V
I
h
h
CE(sat)
BE(sat)
C
CBO
FE1
FE2
f
a
CBO
CEO
EBO
T
ob
= 25°C
R
−55 to +150
* 2
Rating
500
625
150
30
60
25
50
7
1
CE(sat)
V
I
I
I
V
V
I
I
V
V
E
C
C
C
C
CB
CB
CB
CE
CE
= 10 µA, I
= 300 mA, I
= 300 mA, I
= 10 µA, I
= 10 mA, I
170 to 340
= 20 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
S
Unit
mW
mA
°C
°C
C
V
V
V
A
E
Conditions
E
E
B
C
C
E
www.DataSheet.co.kr
= 0
= 0
B
B
= −50 mA, f = 200 MHz
= 0
= 0
= 0, f = 1 MHz
= 150 mA
= 500 mA
= 30 mA
= 30 mA
0.7
(1.27)
±0.1
0.45
2.54
5.0
1
+0.15
–0.1
Min
30
60
25
50
85
40
2
7
±0.2
±0.15
3
(1.27)
0.35
Typ
200
1.1
6
0.45
Max
+0.15
–0.1
340
0.1
0.6
1.5
15
TO-92 Package
4.0
1: Emitter
2: Collector
3: Base
±0.2
Unit: mm
MHz
Unit
µA
pF
V
V
V
V
V
1
Datasheet pdf - http://www.DataSheet4U.net/
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C1318 Summary of contents
Page 1
... Transistors 2SC1317, 2SC1318 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA719 and 2SA720 I Features • Low collector to emitter saturation voltage V • Complementary pair with 2SA719 and 2SA720 I Absolute Maximum Ratings T Parameter Symbol 2SC1317 V Collector to CBO ...
Page 2
... 800 700 600 500 400 300 200 100 100 120 140 160 ( °C ) Ambient temperature T a CE(sat) C 100 / 75° 0.3 25°C −25°C 0.1 0.03 0.01 0.01 0.03 0.1 0 Collector current I C ...
Page 3
... Ambient temperature T a Area of safe operation (ASO) 10 Single pulse = 25° 0.3 DC 0.1 0.03 0.01 0.003 0.001 200 0.1 0 Collector to emitter voltage V www.DataSheet.co.kr 2SC1317, 2SC1318 30 100 ( Datasheet pdf - http://www.DataSheet4U.net/ ...