M63806KP Mitsubishi Electric, M63806KP Datasheet
M63806KP
Available stocks
Related parts for M63806KP
M63806KP Summary of contents
Page 1
DESCRIPTION M63806P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semicon- ductor integrated circuits perform high-current driving with extremely low input-current supply. FEATURES Three package configurations (P, FP, and KP) Medium breakdown voltage ...
Page 2
... Conditions Output, H Current per circuit output, L M63806P when mounted M63806FP on board M63806KP (Unless otherwise noted –40 ~ +85 C) Test conditions Duty Cycle no more than 50% Duty Cycle no more than 100% Duty Cycle no more than 30% Duty Cycle no more than 100% Duty Cycle no more than 12% ...
Page 3
... R = 220 , Vo = 35V L (3)Electrostatic capacity C includes floating capacitance at L connections and input capacitance at probes TYPICAL CHARACTERISTICS Thermal Derating Factor Characteristics 2.0 M63806P 1.5 M63806FP 1.0 M63806KP 0 Ambient temperature Duty Cycle-Collector Characteristics (M63806P) 400 300 200 •The collector current values 100 represent the current per circuit. • ...
Page 4
... 100 Duty cycle (%) Duty Cycle-Collector Characteristics (M63806KP) 400 ~ 300 200 •The collector current values 100 represent the current per circuit. •Repeated frequency •The value the circle represents the value of the simultaneously-operated circuit. • ...
Page 5
Output Saturation Voltage Collector Current Characteristics 100 I = 2mA – 0.05 0.10 0.15 Output saturation voltage V (V) CE(sat) Grounded Emitter ...