M63807KP Mitsubishi Electric, M63807KP Datasheet

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M63807KP

Manufacturer Part Number
M63807KP
Description
(M63807xx) 8-UNIT 300mA TRANSISTOR ARRAY
Manufacturer
Mitsubishi Electric
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
M63807KP
Manufacturer:
MIT
Quantity:
20 000
www.DataSheet4U.com
DESCRIPTION
M63807P/FP/KP are eight-circuit Single transistor arrays.
The circuits are made of NPN transistors. Both the semicon-
ductor integrated circuits perform high-current driving with
extremely low input-current supply.
FEATURES
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M63807P/FP/KP each have eight circuits consisting of
NPN transistor. The transistor emitters are all connected to
the GND pin. The transistors allow synchronous flow of
300mA collector current. A maximum of 35V voltage can be
applied between the collector and emitter.
Three package configurations (P, FP, and KP)
Medium breakdown voltage (BV
Synchronizing current (I
Low output saturation voltage
Wide operating temperature range (Ta = –40 to +85 C)
C(max)
= 300mA)
CEO
35V)
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
PIN CONFIGURATION
CIRCUIT DIAGRAM
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
INPUT
INPUT
INPUT
M63807P/FP/KP
The eight circuits share the GND.
8-UNIT 300mA TRANSISTOR ARRAY
Package type
IN1
IN2
IN3
IN4
IN5
IN6
IN7
IN8
GND
NC
IN1
IN2
IN3
IN4
IN5
IN6
IN7
IN8
GND
Package type
10.5K
10
4
1
3
4
5
6
8
9
1
2
3
5
6
7
8
9
2
7
10K
20P2N-A(FP)
20P2E-A(KP)
18P4G(P)
18
17
16
15
14
13
12
11
10
20
19
18
17
16
15
14
13
12
11
O1
O2
O3
O4
O5
O6
O7
O8
NC
NC
O1
O2
O3
O4
O5
O6
O7
O8
NC
NC : No connection
OUTPUT
GND
OUTPUT
OUTPUT
Unit:
Jan. 2000

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M63807KP Summary of contents

Page 1

DESCRIPTION M63807P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semicon- ductor integrated circuits perform high-current driving with extremely low input-current supply. FEATURES Three package configurations (P, FP, and KP) Medium breakdown voltage ...

Page 2

... Conditions Output, H Current per circuit output, L M63807P when mounted M63807FP on board M63807KP (Unless otherwise noted –40 ~ +85 C) Test conditions Duty Cycle no more than 50% Duty Cycle no more than 100% Duty Cycle no more than 30% Duty Cycle no more than 100% Duty Cycle no more than 12% ...

Page 3

... R = 220 , Vo = 35V L (3)Electrostatic capacity C includes floating capacitance at L connections and input capacitance at probes TYPICAL CHARACTERISTICS Thermal Derating Factor Characteristics 2.0 M63807P 1.5 M63807FP 1.0 M63807KP 0 Ambient temperature Duty Cycle-Collector Characteristics (M63807P) 400 300 200 •The collector current values 100 represent the current per circuit. • ...

Page 4

... 100 20 40 Duty cycle (%) Duty Cycle-Collector Characteristics (M63807KP) 400 ~ 300 200 •The collector current values 100 represent the current per circuit. •Repeated frequency •The value the circle represents the value of the simultaneously-operated circuit. • ...

Page 5

Output Saturation Voltage Collector Current Characteristics 100 I = 2mA – 0.05 0.10 0.15 Output saturation voltage V (V) CE(sat) Grounded Emitter ...

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