M63823GP

Manufacturer Part NumberM63823GP
Description(M63823xP) 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY
ManufacturerMitsubishi Electric
M63823GP datasheet
 


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DESCRIPTION
M63823P, M63823FP and M63823GP are seven-circuit
Darlington transistor arrays with clamping diodes. The cir-
cuits are made of NPN transistors. Both the semi-conductor
integrated circuits perform high-current driving with ex-
tremely low input-current supply.
Production lineup has been newly expanded with the addi-
tion of 225mil (GP) package.
M63823P and M63823FP have the same pin connection as
M54523P and M54523FP. (Compatible with M54523P and
M54523FP) More over, the features of M63823P and
M63823FP are equal or superior to those of M54523P and
M54523FP.
FEATURES
Three package configurations (P, FP and GP)
Pin connection Compatible with M54523P and M54523FP
High breakdown voltage (BV
CEO
High-current driving (I
= 500mA)
C(max)
With clamping diodes
PMOS Compatible input
Wide operating temperature range (Ta = –40 to +85 C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
FUNCTION
The M63823P, M63823FP and M63823GP each have seven
circuits consisting of NPN Darlington transistors. These ICs
have resistance of 2.7k
between input transistor bases and
input pins. A spike-killer clamping diode is provided between
each output pin (collector) and COM pin (pin 9). The output
transistor emitters are all connected to the GND pin (pin 8).
The collector current is 500mA maximum. Collector-emitter
supply voltage is 50V maximum.The M63823FP and
M63823GP is enclosed in molded small flat package, en-
abling space-saving design.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V
Collector-emitter voltage
CEO
I
Collector current
C
V
I
Input voltage
I
Clamping diode forward current
F
V
Clamping diode reverse voltage
R
P
Power dissipation
d
T
Operating temperature
opr
T
Storage temperature
stg
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63823P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
PIN CONFIGURATION
INPUT
Package type
CIRCUIT DIAGRAM
50V)
INPUT
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
(Unless otherwise noted, Ta = –40 ~ +85 C)
Conditions
Output, H
Current per circuit output, L
Ta = 25 C, when mounted on board
IN1
1
O1
16
IN2
2
O2
15
IN3
14
O3
3
IN4
13
O4
OUTPUT
4
IN5
5
12
O5
O6
IN6
6
11
IN7
O7
7
10
GND
COM COMMON
9
8
16P4(P)
16P2N-A(FP)
16P2S-A(GP)
COM
OUTPUT
2.7k
7.2k
3k
GND
The seven circuits share the COM and GND
Unit :
Ratings
Unit
–0.5 ~ +50
V
500
mA
–0.5 ~ +30
V
500
mA
50
V
1.47(P)/1.00(FP)/0.80(GP)
W
–40 ~ +85
C
–55 ~ +125
C
Jan. 2000

M63823GP Summary of contents

  • Page 1

    ... COM pin (pin 9). The output transistor emitters are all connected to the GND pin (pin 8). The collector current is 500mA maximum. Collector-emitter supply voltage is 50V maximum.The M63823FP and M63823GP is enclosed in molded small flat package, en- abling space-saving design. ABSOLUTE MAXIMUM RATINGS Symbol ...

  • Page 2

    RECOMMENDED OPERATING CONDITIONS Symbol Parameter V Output voltage O Duty Cycle Collector current more than 8% (Current per 1 cir more than 5% cuit when 7 circuits more than 4% I ...

  • Page 3

    ... TYPICAL CHARACTERISTICS Thermal Derating Factor Characteristics 2.0 M63823P 1.5 M63823FP 1.0 M63823GP 0 Ambient temperature Duty Cycle-Collector Characteristics (M63823P) 500 400 300 200 •The collector current values represent the current per circuit. 100 •Repeated frequencyy 10Hz •The value the circle represents the value of the simultaneously-operated circuit. • ...

  • Page 4

    ... Ta = – Input voltage V (V) I MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> Duty Cycle-Collector Characteristics (M63823GP) 500 400 1 300 2 200 •The collector current values 100 7 represent the current per circuit. •Repeated frequency 10Hz •The value the circle represents the value of the simultaneously-operated circuit. • ...