RM50TC-2H Mitsubishi Electric Semiconductor, RM50TC-2H Datasheet - Page 2

• Manufacturer Part Number: RM50TC-2H
• Description: MEDIUM POWER GENERAL USE INSULATED TYPE
• Manufacturer: Mitsubishi Electric Semiconductor

ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
V
V
E
I
I
I
f
T
T
V
I
V
R
R
O
FSM
2 t
RRM
j
stg
RRM
RSM
a
iso
FM
th (j-c)
th (c-f)
Symbol
Symbol
Symbol
—
—
—
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Recommended AC input voltage
DC output current
Surge (non-repetitive) forward current
I
Maximum operating frequency
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Repetitive reverse current
Forward voltage
Thermal resistance
Contact thermal resistance
Insulation resistance
2 t
for fusing
Parameter
Parameter
Parameter
Three-phase full wave rectifying circuit, T
One half cycle at 60Hz, peak value
Value for one cycle of surge current
Charged part to case
Main terminal screw M5
Mounting screw M5
Typical value
T
T
Junction to case
Case to fin, conductive grease applied
Measured with a 500V megohmmeter between main terminal
and case
j
j
=150 C, V
=25 C, I
400
480
110
M
FM
RRM
=100A, instantaneous meas.
applied
Test conditions
Conditions
800
960
220
H
Voltage class
C
=102 C
1200
1350
370
RM50TC-M,-H,-24,-2H
24
MEDIUM POWER GENERAL USE
MITSUBISHI DIODE MODULES
Min.
10
—
—
—
—
–40~+150
–40~+125
1.47~1.96
1.47~1.96
4.2
Ratings
15~20
15~20
Limits
1000
1000
2500
Typ.
100
220
—
—
—
—
—
1600
1700
440
10
2H
3
INSULATED TYPE
Max.
0.06
1.2
0.2
10
—
kg·cm
kg·cm
Feb.1999
Unit
Unit
N·m
N·m
Unit
M
A
mA
C/ W
C/ W
Hz
V
V
V
A
A
V
g
V
2
C
C
s