RT3P11M Isahaya Electronics, RT3P11M Datasheet - Page 2

• Manufacturer Part Number: RT3P11M
• Description: Composite Transistor
• Manufacturer: Isahaya Electronics

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ELECTRICAL CHARACTERISTICS (Ta=25℃)
TYPICAL CHARACTERISTICS
V
I
h
V
V
V
R
R
f
T
CBO
FE
Symbol
(BR)CEO
CE(sat)
I(ON)
I(OFF)
1
2
/R
1
-1000
-100
-100
-10
-10
-1
Collector to Emitter break down voltage
Collector cut off current
DC forward current gain
Collector to Emitter saturation voltage
Input on voltage
Input off voltage
Input resistor
Resistor ratio
Gain band width product
-0.0
-1
VCE=-0.2V
VCE=-5V
INPUT OFF VOLTAGE VI(OFF) [V]
-0.4
COLLECTOR CURRENT IC [mA]
VS. COLLECTOR CURRENT
VS. INPUT OFF VOLTAGE
COLLECTOR CURRENT
Parameter
INPUT ON VOLTAGE
-0.8
ISAHAYA ELECTRONICS CORPORATION
-10
-1.2
-1.6
I
V
V
I
V
V
-
-
V
C
C
CB
CE
CE
CE
CE
-100
-2.0
=-100μA,R
=-10mA,I
=-5V,I
=-0.2V,I
=-5V,I
=-6V,I
=-50V,I
Test conditions
C
C
E
=-10mA
=-100μA
=10mA
E
B
C
=-0.5mA
=0
=-5mA
1000
BE
100
10
=∞
-1
VCE=-5V
COLLECTOR CURRENT IC [mA]
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
Min
-0.8
-50
0.9
50
Composite Transistor With Resistor
7
-
-
-
-
-10
Limits
Typ
-0.1
-1.5
-1.1
150
1.0
10
For Switching Application
-
-
-
Silicon Epitaxial Type
RT3P11M
Max
-0.1
-0.3
-3.0
1.1
13
-
-
-
-
MH
Unit
μA
kΩ
-100
V
V
V
V
-
-
Z
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