S29CD016J SPANSION, S29CD016J Datasheet

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S29CD016J

Manufacturer Part Number
S29CD016J
Description
(S29CD016J / S29CL016J) Simultaneous Read/Write Flash Memory
Manufacturer
SPANSION
Datasheet

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General Description
Distinctive Characteristics
Performance Characteristics
This document contains information on one or more products under development at Spansion Inc. The information is intended to help you evaluate this product. Do not design in
this product without contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed product without notice.
The Spansion S29CD016J and S29CL016J devices are Floating Gate products fabricated in 110 nm process technology.
These burst mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two
separate banks. These products can operate up to 56 MHz and use a single V
(S29CL-J) that make them ideal for today’s demanding automotive applications.
S29CD016J/S29CL016J
Known Good Die
16 Megabit (512k x 32-Bit) CMOS 2.6 or 3.3 Volt-only
Burst Mode, Dual Boot,
Simultaneous Read/Write Flash Memory
Supplement (Advance Information)
Max Asynch. Access Time, ns (t
Max Synch. Latency, ns (t
Max Synch. Burst Access, ns (t
Max CE# Access Time, ns (t
Max OE# Access time, ns (t
Single 2.6 V (S29CD-J) or 3.3 V (S29CL-J) for read/program/
erase
110 nm Floating Gate Technology
Simultaneous Read/Write operation with zero latency
X32 Data Bus
Dual Boot Sector Configuration (top and bottom)
Flexible Sector Architecture
– CD016J & CL016J: Eight 2K Double word, Thirty-two 16K Double
VersatileI/O™ control (1.65 V to V
Programmable Burst Interface
– Linear for 2, 4, and 8 double word burst with or without wrap around
Secured Silicon Sector that can be either factory or customer
locked
20 year data retention (typical)
Publication Number S29CD016J-CL016J_KGD_SP
word, and Eight 2K Double Word sectors
Speed Option (MHz)
Read Access Times
IACC
OE
CE
)
)
)
BACC
ACC
)
)
CC
)
56
64
64
10
69
22
40
67
67
17
71
22
Revision A
Continuous Burst Read @ 56 MHz
Program
Erase
Standby Mode
Double Word Programming
Sector Erase
Cycling Endurance: 100,000 write cycles per sector (typical)
Command set compatible with JECEC (42.4) standard
Supports Common Flash Interface (CFI)
Persistent and Password methods of Advanced Sector
Protection
Unlock Bypass program command to reduce programming
time
Write operation status bits indicate program and erase
operation completion
Hardware (WP#) protection of two outermost sectors in the
large bank
Ready/Busy (RY/BY#) output indicates data available to
system
Suspend and Resume commands for Program and Erase
Operation
Amendment 2
CC
Current Consumption (Max values)
Typical Program and Erase Times
of 2.5 V to 2.75 V (S29CD-J) or 3.0 V to 3.6 V
Issue Date September 20, 2006
150 µA
90 mA
50 mA
50 mA
18 µs
1.0 s

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S29CD016J Summary of contents

Page 1

... Supplement (Advance Information) General Description The Spansion S29CD016J and S29CL016J devices are Floating Gate products fabricated in 110 nm process technology. These burst mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks. These products can operate MHz and use a single V (S29CL-J) that make them ideal for today’ ...

Page 2

... Maximum Negative Overshoot Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Figure 7.2 Maximum Positive Overshoot Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 List of Tables Table 3.1 Pads Relative To Die Center . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Table 12.1 DC Characteristics, CMOS Compatible . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . S29CD016J/S29CL016J Known Good Die Revision A2 September 20, 2006 ...

Page 3

... The S29CD016J & S29CL016J Flash devices are burst mode, dual boot, simultaneous read/write Flash memories with VersatileI/O™ manufactured on 110 nm process technology. The S29CD016J megabit, 2.6 volt-only, single-power-supply, burst mode Flash memory device that can be configured for 524,288 double words. The S29CL016J is the 3.3 volt-only version of that device. Both devices can be programmed in standard EPROM programmers ...

Page 4

... The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunnelling. The data is programmed using hot electron injection. 1. Die Photograph S29CD016J/S29CL016J Known Good Die Revision A2 September 20, 2006 ...

Page 5

... S29CD016J/S29CL016J Known Good Die ...

Page 6

... V –88.473 SS ACC –88.473 V –88.473 –11.899 CC A9 –88.473 A10 –88.473 –21.905 S29CD016J/S29CL016J Known Good Die µ 3.347 2219.485 85.016 8.031 2219.485 203.994 12.892 2219.485 327.456 17.556 2219.485 445 ...

Page 7

... V 87.381 –42.383 CCQ RESET# 87.381 –36.499 CLK 87.381 –31.394 RY/BY# 88.346 –19.018 ADV# 87.381 –11.386 S29CD016J/S29CL016J Known Good Die µ –2247.216 –672.287 –2247.216 –793.317 –2247.216 –909.217 –2247.216 –1030.247 –2247.216 –1146.147 –1989.671 –1249.469 –1873.771 – ...

Page 8

... PACKING TYPE 4 = Surf Tape (2500 per reel Waffle Pack (42 per waffle pack tray) ADDITIONAL ORDERING OPTIONS 15th Character – S29CD016J only 7E, 08, 01/00 Autoselect 7E, 36, 01/00 Autoselect ID 15th Character – S29CL016J only 7E, 46, 01/00 Autoselect ID 16th Character – Top or Bottom Boot: ...

Page 9

... Packaging Information 5.1 Surftape Packaging Direction of Feed September 20, 2006 Revision S29CD016J/S29CL016J Known Good Die Orientation relative to leading edge of tape and reel Spansion logo location 9 ...

Page 10

... Figure 6.1 provides an overview of Spansion’s Known Good Die test flow. For more detailed information, refer to the S29CD016J/S29CL016J product qualification database. Spansion implements quality assurance procedures throughout the product test flow. These QA procedures also allow Spansion to produce KGD products without requiring or implementing burn-in. In addition, an off-line quality monitoring program (QMP) further guarantees Spansion quality standards are met on Known Good Die products ...

Page 11

... Electronic marking is programmed into every KGD for the purpose of traceability. The electronic marking contains wafer lot number, wafer number of origin, die location on the wafer, mask revision, test program revision, test dates, and speed grade. information is programmed. For more information regarding electronic marking, reference the S29CD016J Electronic Marking Data Sheet Supplement. September 20, 2006 Revision A2 ...

Page 12

... Figure 7.2 Maximum Positive Overshoot Waveform +2 +0 CD016J CL016J S29CD016J/S29CL016J Known Good Die Rating –65°C to +150°C –65°C to +145°C –0 3.0 V –0 3.6 V –0 +13.0 V (Note 1) –0 +3.6 V (Note 1) – ...

Page 13

... CE OE#=V , ACC = CE CCMAX CC Reset = ± 0 VSS ± 0 S29CD016J/S29CL016J Known Good Die Value 4.77 x 2.83 mm 500 µ µm 5,776 µm 74 Al/Cu Si0 /SiN 2 Location/Data Fab 25, TX PNG Penang, Malaysia 98P05AB CS69S 1 Min Typ Max ...

Page 14

... Buyer's use of Known Good Die or Known Good Wafer for use in life support applications is at Buyer's own risk and Buyer agrees to fully indemnify Spansion for any damages resulting in such use or sale S29CD016J/S29CL016J Known Good Die Revision A2 September 20, 2006 ...

Page 15

... Copyright © 2005–2006 Spansion Inc. All Rights Reserved. Spansion, the Spansion logo, MirrorBit, ORNAND, HD-SIM, and combinations thereof are trademarks of Spansion Inc. Other names are for informational purposes only and may be trademarks of their respective owners. September 20, 2006 Revision Description S29CD016J/S29CL016J Known Good Die 15 ...

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