VTB1112 PerkinElmer Optoelectronics, VTB1112 Datasheet

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VTB1112

Manufacturer Part Number
VTB1112
Description
VTB Process Photodiodes
Manufacturer
PerkinElmer Optoelectronics
Datasheet
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a
lensed, dual lead TO-46 package. Cathode is
common to the case. These diodes have very
high shunt resistance and have good blue
response.
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
SYMBOL
VTB Process Photodiodes
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
TC V
TC R
TC I
NEP
V
R
V
I
range
S
C
D*
SC
I
OC
D
SH
BR
1/2
R
p
J
SC
OC
SH
Short Circuit Current
I
Open Circuit Voltage
V
Dark Current
Shunt Resistance
R
Junction Capacitance
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
SC
OC
SH
Temperature Coefficient
Temperature Coefficient
Temperature Coefficient
CHARACTERISTIC
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 2.0 V
H = 0, V = 10 mV
H = 0, V = 10 mV
H = 0, V = 0
365 nm
TEST CONDITIONS
PACKAGE DIMENSIONS
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
26
Min.
320
(See also VTB curves, pages 21-22)
30
2
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
4.2 x 10
3.0 x 10
VTB1112
±15
CHIP ACTIVE AREA: .0025 in
Typ.
-2.0
-8.0
490
920
.12
.25
.31
.19
CASE 19 TO-46 LENSED HERMETIC
60
40
-14
12
(Typ.)
(Typ.)
Max.
1100
100
.23
inch (mm)
VTB1112, 1113
Min.
320
30
2
5.9 x 10
2.1 x 10
VTB1113
-40°C to 110°C
-40°C to 110°C
2
Typ.
-2.0
-8.0
±15
(1.60 mm
490
920
.12
7.0
.31
.19
60
40
-15
13
(Typ.)
(Typ.)
2
Max.
1100
.23
)
20
cm Hz
W
Degrees
UNITS
mV/°C
%/°C
%/°C
A/W
G
mV
nm
nm
µA
pA
nF
V
Hz
/ W

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