SG23N06T Sirectifier Semiconductors, SG23N06T Datasheet
SG23N06T
Manufacturer Part Number
SG23N06T
Description
Discrete IGBTs
Manufacturer
Sirectifier Semiconductors
Datasheet
1.SG23N06T.pdf
(2 pages)
www.DataSheet4U.com
C(TAB)
(RBSOA)
Symbol
Weight
SSOA
V
V
V
V
T
I
I
T
I
M
P
C25
C90
T
CGR
GEM
CES
GES
CM
JM
stg
Symbol
BV
C
J
V
d
V
I
I
GE(th)
CES
GES
CE(sat)
SG23N06T
CES
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load; L=100uH
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10s
Mounting torque
T
J
J
C
C
C
C
GE
=25
=25
=25
=90
=25
=25
=15V; T
o
o
o
o
o
o
I
I
V
V
V
I
C to 150
C to 150
C
C
C
C
C
C, 1 ms
C
CE
GE
CE
=250uA; V
=250uA; V
=I
G
C
=0.8V
=0V; V
C90
=0V;
E
VJ
; V
=125
GE
o
o
CES
SG23N06T, SG23N06DT
SG23N06DT
C
C; R
GE
G=Gate, C=Collector,
E=Emitter,TAB=Collector
=15V
GE
CE
o
;
=±20V
C; R
=V
=0V
Test Conditions
GE
T
T
Test Conditions
GE
=1 M ;
J
J
G
=25
=150
=22
o
C
o
C
Discrete IGBTs
Dimensions TO-247AD
min.
600
2.5
Characteristic Values
(T
J
=25
Maximum Ratings
o
@ 0.8 V
C , unless otherwise specified)
typ.
2.1
-55...+150
-55...+150
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
1.13/10
I
CM
300
600
600
±20
±30
150
150
48
23
96
6
=48
19.81 20.32
20.80 21.46
15.75 16.26
3.55
4.32
1.65
10.8
Min.
Millimeter
CES
5.4
1.0
4.7
0.4
1.5
-
max.
±100
200
5.0
2.5
Max.
1
3.65
5.49
2.13
11.0
2.49
6.2
4.5
1.4
5.3
0.8
Min.
0.780
0.819
0.610
0.140
0.170
0.212
0.065
-
0.040
0.426
0.185
0.016
0.087
Nm/Ib.in.
Inches
Unit
mA
uA
nA
Unit
V
V
V
o
o
V
V
A
A
W
g
0.800
0.845
0.640
0.144
0.216
0.244
0.084
0.177
0.055
0.433
0.209
0.031
0.102
C
C
Max.
Related parts for SG23N06T
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
EXTERNAL SWITCH CONTROLED SINGLE PHASE SOLID STATE RELAYS
Manufacturer:
CELDUC [celduc-relais]
Datasheet:
Part Number:
Description:
Discrete IGBTs
Manufacturer:
Sirectifier Semiconductors
Datasheet:
Part Number:
Description:
Discrete Igbts
Manufacturer:
Sirectifier Semiconductors
Datasheet:
Part Number:
Description:
Discrete Igbts
Manufacturer:
Sirectifier Semiconductors
Datasheet:
Part Number:
Description:
Thyristor-Thyristor Modules
Manufacturer:
Sirectifier Semiconductors
Datasheet:
Part Number:
Description:
Thyristor-Thyristor Modules
Manufacturer:
Sirectifier Semiconductors
Datasheet:
Part Number:
Description:
Thyristor-Thyristor Modules
Manufacturer:
Sirectifier Semiconductors
Datasheet:
Part Number:
Description:
Thyristor-Thyristor Modules
Manufacturer:
Sirectifier Semiconductors
Datasheet:
Part Number:
Description:
Thyristor-Thyristor Modules
Manufacturer:
Sirectifier Semiconductors
Datasheet:
Part Number:
Description:
Thyristor-Thyristor Modules
Manufacturer:
Sirectifier Semiconductors
Datasheet:
Part Number:
Description:
Thyristor-Thyristor Modules
Manufacturer:
Sirectifier Semiconductors
Datasheet:
Part Number:
Description:
Thyristor-Thyristor Modules
Manufacturer:
Sirectifier Semiconductors
Datasheet:
Part Number:
Description:
Thyristor-Thyristor Modules
Manufacturer:
Sirectifier Semiconductors
Datasheet:
Part Number:
Description:
Thyristor-Thyristor Modules
Manufacturer:
Sirectifier Semiconductors
Datasheet:
Part Number:
Description:
Thyristor-Thyristor Modules
Manufacturer:
Sirectifier Semiconductors
Datasheet:
SG23N06T Summary of contents
Page 1
... SG23N06T, SG23N06DT www.DataSheet4U.com E G=Gate, C=Collector, C(TAB) C E=Emitter,TAB=Collector G SG23N06DT SG23N06T Symbol = 150 C CES = 150 C; R CGR J V Continuous GES V Transient GEM =25 C C25 =90 C C90 = SSOA V =15V; T =125 C ...
Page 2
... SG23N06T, SG23N06DT www.DataSheet4U.com Symbol =10V ts C C90 CE Pulse test, t 300us, duty cycle 2% C ies C V =25V; V =0V; f=1MHz oes res =15V C90 Inductive load, T d(on =15V; L=100uH ri C C90 =0. ...