rjp30h1dpd Renesas Electronics Corporation., rjp30h1dpd Datasheet

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rjp30h1dpd

Manufacturer Part Number
rjp30h1dpd
Description
Silicon N Channel Igbt High Speed Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
RJP30H1DPD
Manufacturer:
RENESAS
Quantity:
12 500
RJP30H1DPD
Silicon N Channel IGBT
High speed power switching
Features
 Trench gate and thin wafer technology (G6H-II series)
 High speed switching: t
 Low collector to emitter saturation voltage: V
 Low leak current: I
Outline
Absolute Maximum Ratings
Collector to emitter voltage
Gate to emitter voltage
Collector current
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW  10 s, duty cycle  1%
R07DS0465EJ0200 Rev.2.00
Jun 15, 2011
2. Tc = 25C
RENESAS Package code: PRSS0004ZJ-A
(Package name : TO-252)
CES
Item
= 1 A max.
r
= 80 ns typ., t
1
2
4
3
f
= 150 ns typ.
CE(sat)
= 1.5 V typ.
G
ic(peak)
Symbol
P
V
V
Tstg
C
j-c
Tj
CES
GES
I
Note2
C
Note1
C
E
Preliminary
–55 to +150
Ratings
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
3.13
360
±30
200
150
30
40
R07DS0465EJ0200
Datasheet
Jun 15, 2011
°C/W
Unit
(Tc = 25°C)
Page 1 of 6
°C
°C
W
V
V
A
A
Rev.2.00

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rjp30h1dpd Summary of contents

Page 1

... RJP30H1DPD Silicon N Channel IGBT High speed power switching Features  Trench gate and thin wafer technology (G6H-II series)  High speed switching typ  Low collector to emitter saturation voltage: V  Low leak current A max. CES Outline RENESAS Package code: PRSS0004ZJ-A ...

Page 2

... RJP30H1DPD Electrical Characteristics Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Switching time Notes: 3. Pulse test R07DS0465EJ0200 Rev ...

Page 3

... RJP30H1DPD Main Characteristics Maximum Safe Operation Area 1000 100 ° 1 shot pulse 0.01 0 Collector to Emitter Voltage V Typical Output Characteristics (2) 200 ° Pulse Test 160 120 Collector to Emitter Voltage V Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) ...

Page 4

... RJP30H1DPD Typical Capacitance vs. Colloctor to Emitter Voltage 10000 MHz 25°C 1000 100 Colloctor to Emitter Voltage V Switching Characteristics (Typical) (1) 1000 V = 150 Ω 25° 100 t d(off d(on Colloctor Current I Switching Characteristics (Typical) (3) ...

Page 5

... RJP30H1DPD Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.3 0.2 0.1 0.03 0.01 Switching Time Test Circuit Ic Monitor R L Vin Monitor Rg D.U.T. . Vin = 15 V R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 100 m Pulse Width PW (s) 10% Vin 10% t d(on Preliminary Tc = 25° Waveform ...

Page 6

... RJP30H1DPD Package Dimensions Package Name JEITA Package Code RENESAS Code ⎯ TO-252 PRSS0004ZJ-A (1.2) 2.29 ± 0.5 Ordering Information Orderable Part Number RJP30H1DPD-00-J2 R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Previous Code MASS[Typ.] ⎯ 0.319g 6.5 ± 0.3 2.3 ± 0.2 (5.6 ± 0.5) 0.55 ± 0.1 0.25 Max 0.8 ± 0.1 0.55 ± 0.1 2.29 ± 0.5 Quantity 3000 pcs Preliminary Unit ...

Page 7

... Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 Notice © 2011 Renesas Electronics Corporation. All rights reserved. http://www.renesas.com Colophon 1.1 ...

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