spa11n60c3e8185 Infineon Technologies Corporation, spa11n60c3e8185 Datasheet

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spa11n60c3e8185

Manufacturer Part Number
spa11n60c3e8185
Description
N-channel Mosfet >500v?900v Power Transistor Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet
Cool MOS™ Power Transistor
Continuous drain current
T
T
Pulsed drain current, t
Avalanche energy, single pulse
I
Avalanche energy, repetitive t
I
Avalanche current, repetitive t
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation,
Operating and storage temperature
Reverse diode dv/dt
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
Rev. 3 . 1
D
D
SPA11N60C3E8185
Type
SPP11N60C3
SPI11N60C3
SPA11N60C3
C
C
=5.5A, V
=11A, V
Maximum Ratings
Parameter
= 25 °C
= 100 °C
DD
DD
=50V
=50V
T
PG-TO220 FP
C
PG-TO220
PG-TO262
Package
PG-TO220
7)
= 25°C
p
limited by T
AR
AR
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
limited by T
limited by T
jmax
Ordering Code
Q67040-S4395
Q67042-S4403
Q67040-S4408
Q67040-S4408
Page 1
jmax
jmax
PG-TO220FP
P-TO220-3-31
2)
Symbol
I
I
E
E
I
V
V
P
T
dv/dt
D
D puls
AR
j ,
AS
AR
GS
GS
tot
T
Marking
11N60C3
11N60C3
11N60C3
11N60C3
11N60C3
stg
1
2
3
PG-TO262
V
SPP_I
DS
R
340
±20
±30
125
0.6
DS(on)
11
33
11
@ T
7
I
D
-55...+150
Value
jmax
15
SPP11N60C3
SPA
11
340
±20
±30
2007-08-30
PG-TO220
0.6
7
33
11
33
0.38
650
1)
11
1)
V/ns
Unit
A
A
mJ
A
V
W
°C
V
A

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spa11n60c3e8185 Summary of contents

Page 1

... High peak current capability • Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) Type Package SPP11N60C3 PG-TO220 PG-TO262 SPI11N60C3 PG-TO220 FP SPA11N60C3 PG-TO220 SPA11N60C3E8185 Maximum Ratings Parameter Continuous drain current ° 100 °C C Pulsed drain current, t limited by T ...

Page 2

Maximum Ratings Parameter Drain Source voltage slope V = 480 125 ° Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ...

Page 3

Electrical Characteristics Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance, energy related Effective output capacitance, time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to ...

Page 4

Electrical Characteristics Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Typical Transient Thermal Characteristics Symbol ...

Page 5

Power dissipation tot C SPP11N60C3 140 W 120 110 100 Safe operating area ...

Page 6

Transient thermal impedance thJC p parameter K Typ. ...

Page 7

Typ. drain-source on resistance R =f(I ) DS(on) D parameter: T =150° Ω 4. 1.6 1.4 1.2 1 0.8 0.6 0 Typ. transfer characteristics ≥ 2 ...

Page 8

Forward characteristics of body diode parameter µ SPP11N60C3 °C typ 150 °C ...

Page 9

Typ. drain source voltage slope dv/dt = f(R ), inductive load par.: V =380V, V =0/+13V 140 V/ns dv/dt(off) 120 110 100 dv/dt(on ...

Page 10

Avalanche energy par 5 350 mJ 250 200 150 100 100 23 Avalanche power losses P = ...

Page 11

Typ. C stored energy oss E =f(V ) oss DS 7.5 µJ 6 5.5 5 4.5 4 3.5 3 2.5 2 1 100 200 300 Definition of diodes switching characteristics Rev SPI11N60C3, SPA11N60C3, ...

Page 12

PG-TO-220-3-1, PG-TO-220-3-21 Rev. 3.1 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Page 12 SPP11N60C3 2007-08-30 ...

Page 13

PG-TO-220-3-31/3-111: Outline/ Fully isolated package (2500VAC; 1 minute). Rev. 3.1 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Page 13 SPP11N60C3 2007-08-30 ...

Page 14

PG-TO-262-3-1 (I²-PAK) Rev SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Page 14 SPP11N60C3 2007-08-30 ...

Page 15

PG-TO220-3-36:Outline fully isolated package (2500VAC; 1 minute) Rev. 3.1 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Page 15 SPP11N60C3 2007-08-30 ...

Page 16

Published by Infineon Technologies AG 81726 München Germany © Infineon Technologies AG 2006 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights ...

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