spa11n60c3e8185 Infineon Technologies Corporation, spa11n60c3e8185 Datasheet - Page 10

• Manufacturer Part Number: spa11n60c3e8185
• Description: N-channel Mosfet >500v?900v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

21 Avalanche energy
E
par.: I
23 Avalanche power losses
P
parameter: E
Rev. 3 .1
AS
AR
mJ
W
350
250
200
150
100
300
200
150
100
= f (T
= f (f )
50
50
D
0
0
20
10
= 5.5 A, V
4
j
)
40
AR
=0.6mJ
60
DD
80
= 50 V
10
100
5
120
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Hz
°C
T
f
j
160
10
Page 10
6
22 Drain-source breakdown voltage
V
24 Typ. capacitances
C = f (V
parameter: V
(BR)DSS
pF
10
10
10
10
10
720
680
660
640
620
600
580
560
540
V
-60
4
3
2
1
0
0
SPP11N60C3
DS
= f (T
)
C
100
-20
rss
GS
j
)
=0V, f=1 MHz
200
20
C
C
300
60
iss
oss
SPP11N60C3
100
400
2007-08-30
°C
V
T
V
j
DS
180
600