spa11n60c3e8185 Infineon Technologies Corporation, spa11n60c3e8185 Datasheet - Page 3

• Manufacturer Part Number: spa11n60c3e8185
• Description: N-channel Mosfet >500v?900v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 3 .1
Electrical Characteristics
Parameter
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Effective output capacitance,
time related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
1 Limited only by maximum temperature
2 Repetitve avalanche causes additional power losses that can be calculated as P
3 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4 Soldering temperature for TO-263: 220°C, reflow
5 C
6 C
7 ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.
o(er)
o(tr)
is a fixed capacitance that gives the same charging time as C
is a fixed capacitance that gives the same stored energy as C
5)
6)
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
g
C
C
C
C
C
t
t
t
t
Q
Q
Q
V
Symbol
d(on)
r
d(off)
f
fs
(plateau)
iss
oss
rss
o(er)
o(tr)
gs
gd
g
V
I
V
f=1MHz
V
V
V
I
R
V
V
V
V
D
D
Page 3
DS
GS
GS
DS
DD
G
DD
DD
GS
DD
=7A
=11A,
=6.8Ω
≥2*I
=0V to 480V
=0V, V
=0V,
=380V, V
=480V, I
=480V, I
=0 to 10V
=480V, I
Conditions
D
*R
DS
DS(on)max
D
D
D
GS
=25V,
=11A
=11A,
=11A
=0/10V,
oss
oss
while V
while V
,
min.
DS
DS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AV
is rising from 0 to 80% V
is rising from 0 to 80% V
=E
Values
AR
1200
typ.
390
8.3
5.5
5.5
30
45
85
10
44
22
45
*f.
5
5
SPP11N60C3
2007-08-30
max.
70
60
9
-
-
-
-
-
-
-
-
-
-
-
Unit
S
pF
ns
nC
V
DSS
DSS
.
.