spa11n60c3e8185 Infineon Technologies Corporation, spa11n60c3e8185 Datasheet - Page 6

• Manufacturer Part Number: spa11n60c3e8185
• Description: N-channel Mosfet >500v?900v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

5 Transient thermal impedance
Z
parameter: D = t
7 Typ. output characteristic
I
parameter: t
D
thJC
Rev. 3 .1
K/W
= f (V
10
10
10
10
10
10
A
40
32
28
24
20
16
12
= f (t
-1
-2
-3
-4
8
4
0
1
0
10
0
DS
-7
p
); T
3
)
10
p
= 10 µs, V
-6
6
j
=25°C
p
/T
10
9
20V
10V
8V
-5
12
10
GS
15
-4
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10
18
-3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
21
4,5V
6,5V
6V
5,5V
5V
V
s
V
t
7V
p
DS
27
10
-1
Page 6
6 Transient thermal impedance FullPAK
Z
parameter: D = t
8 Typ. output characteristic
I
parameter: t
D
thJC
K/W
= f (V
10
10
10
10
10
10
A
22
18
16
14
12
10
= f (t
-1
-2
-3
-4
8
6
4
2
0
1
0
10
0
DS
-7
p
); T
10
)
p
-6
= 10 µs, V
5
j
10
=150°C
p
-5
/t
10
10
-4
20V
8V
7V
7.5V
10
GS
-3
15
SPP11N60C3
10
-2
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
2007-08-30
10
V
-1
5.5V
5V
4.5V
t
6V
V
p
4V
s
DS
10
25
1