spa11n60c3e8185 Infineon Technologies Corporation, spa11n60c3e8185 Datasheet - Page 7

• Manufacturer Part Number: spa11n60c3e8185
• Description: N-channel Mosfet >500v?900v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

9 Typ. drain-source on resistance
R
parameter: T
11 Typ. transfer characteristics
I
parameter: t
D
Rev. 3.1
DS(on)
= f ( V
Ω
1.6
1.4
1.2
0.8
0.6
0.4
A
40
32
28
24
20
16
12
2
1
8
4
0
0
0
=f(I
GS
2
4V
D
); V
2
p
)
j
=150°C, V
4
= 10 µs
4.5V
DS
4
6
≥ 2 x I
25°C
5V
6
8
GS
D
10
8
x R
12
5.5V
6.5V
8V
20V
DS(on)max
10
14
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
150°C
12
16
6V
V
I
V
A
D
GS
15
20
Page 7
10 Drain-source on-state resistance
R
parameter : I
12 Typ. gate charge
V
parameter: I
GS
DS(on)
Ω
2.1
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
= f (Q
V
16
12
10
1
0
8
6
4
2
0
-60
0
SPP11N60C3
SPP11N60C3
= f (T
Gate
10
-20
D
D
j
)
= 11 A pulsed
= 7 A, V
)
20
20
98%
0,2
30
typ
V
GS
60
DS max
40
= 10 V
SPP11N60C3
100
0,8 V
50
2007-08-30
DS max
°C
nC
T
Q
j
Gate
180
70