spa11n60c3e8185 Infineon Technologies Corporation, spa11n60c3e8185 Datasheet - Page 9

• Manufacturer Part Number: spa11n60c3e8185
• Description: N-channel Mosfet >500v?900v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

17 Typ. drain source voltage slope
dv/dt = f(R
par.: V
19 Typ. switching losses
E = f(R
par.: V
mWs
V/ns
Rev. 3 .1
0.24
0.16
0.12
0.08
0.04
140
120
110
100
90
80
70
60
50
40
30
20
10
0
DS
DS
0
0
G
*) Eon includes SPD06S60 diode
), inductive load, T
=380V, V
=380V, V
commutation losses
G
10
10
dv/dt(off)
), inductive load, T
20
20
GS
GS
Eoff
30
30
=0/+13V, I
=0/+13V, I
dv/dt(on)
40
40
j
=125°C
Eon*
j
50
50
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
= 125°C
D
D
=11A
=11A
Ω
Ω
R
R
G
G
70
70
Page 9
18 Typ. switching losses
E = f (I
par.: V
20 Avalanche SOA
I
par.: T
AR
mWs
0.025
0.015
0.005
= f (t
0.04
0.03
0.02
0.01
A
11
0
9
8
7
6
5
4
3
2
1
0
10
DS
j
D
0
≤ 150 °C
*) Eon includes SPD06S60 diode
), inductive load, T
AR
-3
=380V, V
commutation losses
)
10
2
-2
Eon*
10
T
-1
4
j (START)
GS
=125°C
10
=0/+13V, R
Eoff
0
6
10
j
=125°C
SPP11N60C3
1
8
10
2007-08-30
G
T
2
j (START)
=6.8Ω
A
=25°C
t
µs
I
AR
D
10
12
4