ipp100n04s4-h2 Infineon Technologies Corporation, ipp100n04s4-h2 Datasheet

no-image

ipp100n04s4-h2

Manufacturer Part Number
ipp100n04s4-h2
Description
Optimos -t2 Power-transistor
Manufacturer
Infineon Technologies Corporation
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPP100N04S4-H2
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPP100N04S4-H2
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.0
OptiMOS
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
IPB100N04S4-02
IPI100N04S4-02
IPP100N04S4-02
®
-T2 Power-Transistor
2)
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
j
=25 °C, unless otherwise specified
1)
2)
Symbol
I
I
E
I
V
P
T
-
D
D,pulse
AS
j
AS
GS
tot
, T
Marking
4N04H2
4N04H2
4N04H2
stg
T
T
T
I
-
-
T
-
-
D
C
C
C
C
=50A
page 1
=25°C, V
=100°C, V
=25°C
=25°C
PG-TO263-3-2
Conditions
GS
GS
Product Summary
V
R
I
=10V
D
DS
DS(on),max
=10V
IPI100N04S4-H2, IPP100N04S4-H2
2)
PG-TO262-3-1
(SMD version)
-55 ... +175
55/175/56
Value
100
100
400
280
100
±20
115
IPB100N04S4-H2
PG-TO220-3-1
100
2.4
40
2010-04-13
Unit
A
mJ
A
V
W
°C
V
m
A

Related parts for ipp100n04s4-h2

ipp100n04s4-h2 Summary of contents

Page 1

... I T =25°C D,pulse =50A =25°C tot stg - - page 1 IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 DS (SMD version) DS(on),max D PG-TO262-3-1 PG-TO220-3-1 Value =10V 100 2) 100 =10V 400 280 100 ±20 115 -55 ... +175 55/175/ 2.4 m 100 A Unit ° ...

Page 2

... GS(th =40V, V =0V DSS =18V, V =0V =85° =20V, V =0V GSS =10V, I =100A DS(on =10V, I =100A SMD version page 2 IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 Values min. typ. max 1 2.0 3.0 4 100 - 2.4 2.7 - 2.1 2.4 2010-04-13 Unit K/W V µ ...

Page 3

... V =20V, I =50A /dt =100A/µ 1.3K/W the chip is able to carry 172A at 25°C. thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 Values min. typ. max. - 5520 7180 - 1250 1750 - =10V ...

Page 4

... Max. transient thermal impedance Z = f(t thJC parameter µs 10 µ 100 µ 100 [V] page 4 IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4- ≥ SMD 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - ...

Page 5

... [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 4 3.5 3 2.5 2 1.5 -55 ° [V] page 5 IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4- °C; SMD 5 6 100 200 I [ 100 SMD -60 - 100 T [° ...

Page 6

... Avalanche characteristics parameter: T 1000 100 25 °C 25 ° 0.8 0 1.2 1.2 1.4 1.4 [V] [V] page 6 IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4- MHz [ j(start) 100 °C 150 ° 100 t [µs] AV Ciss Coss Crss °C ...

Page 7

... Q gate Rev. 1.0 14 Drain-source breakdown voltage V BR(DSS 125 175 16 Gate charge waveforms s(th (th [nC] page 7 IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4- -60 - 100 T [° 140 180 Q gate 2010-04-13 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 IPI100N04S4-H2, IPP100N04S4-H2 page 8 IPB100N04S4-H2 2010-04-13 ...

Page 9

... Revision History Version Revision 1.0 Rev. 1.0 IPI100N04S4-H2, IPP100N04S4-H2 Date 13.04.2010 page 9 IPB100N04S4-H2 Changes Final Data Sheet 2010-04-13 ...

Related keywords