ipp100n08n3g Infineon Technologies Corporation, ipp100n08n3g Datasheet
ipp100n08n3g
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ipp100n08n3g Summary of contents
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OptiMOS (TM) 3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant ...
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Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Drain-source on-state resistance Gate ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output ...
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Power dissipation P =f(T ) tot C 120 Safe operating area I =f =25 ° parameter limited by on-state resistance 2 ...
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Typ. output characteristics I =f =25 ° parameter 280 10 V 240 200 160 120 Typ. transfer characteristics I =f |>2|I |R ...
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Drain-source on-state resistance =10 V DS(on max -60 - Typ. capacitances C =f MHz DS ...
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Avalanche characteristics =25 Ω parameter: T j(start) 100 150 ° 0 Drain-source breakdown voltage V =f BR(DSS ...
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PG-TO263-3 (D²-Pak) Rev. 2.0 IPP100N08N3 G IPI100N08N3 G page 8 IPB097N08N3 G 2008-12-05 ...
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PG-TO262-3 (I²-Pak) Rev. 2.0 IPP100N08N3 G IPI100N08N3 G page 9 IPB097N08N3 G 2008-12-05 ...
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PG-TO220-3 Rev. 2.0 IPP100N08N3 G IPI100N08N3 G page 10 IPB097N08N3 G 2008-12-05 ...
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Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...