ipd640n06lg Infineon Technologies Corporation, ipd640n06lg Datasheet

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ipd640n06lg

Manufacturer Part Number
ipd640n06lg
Description
N-channel Mosfet 20v?300v Power Transistor Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet

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Part Number:
IPD640N06LG
Manufacturer:
INFINEON/英飞凌
Quantity:
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Part Number:
IPD640N06LG
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Part Number:
IPD640N06LG
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Rev. 1.2
1)
Features
• For fast switching converters and sync. rectification
• N-channel enhancement - logic level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
Type
Package
IPD640N06L G
Marking
See figure 3
®
Power-Transistor
IPD640N06L G
PG-TO252-3
640N06L
j
PG-TO252-3
=25 °C, unless otherwise specified
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
j
AS
GS
tot
, T
stg
T
T
T
I
I
di /dt =200 A/µs,
T
T
D
D
page 1
C
C
C
j,max
C
=18 A, R
=18 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=175 °C
1)
DS
GS
=20 V,
=25
Product Summary
V
R
I
D
DS
DS(on),max
-55 ... 175
55/175/56
Value
±20
18
12
72
43
47
6
IPD640N06L G
60
64
18
Unit
A
mJ
kV/µs
V
W
°C
V
m
A
2006-03-27

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ipd640n06lg Summary of contents

Page 1

OptiMOS ® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant IPD640N06L G Type Type Package PG-TO252-3 IPD640N06L G ...

Page 2

Parameter Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 2) ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...

Page 4

Power dissipation P =f ≥6 V tot Safe operating area I =f =25 ° parameter ...

Page 5

Typ. output characteristics I =f =25 ° parameter Typ. transfer characteristics I =f |>2 DS(on)max ...

Page 6

Drain-source on-state resistance =10 V DS(on 160 140 120 100 -60 - Typ. capacitances C =f ...

Page 7

Avalanche characteristics parameter: T j(start) 100 10 150 ° Drain-source breakdown voltage V =f BR(DSS ...

Page 8

PG-TO252-3: Outline packaging: Rev. 1.2 page 8 IPD640N06L G 2006-03-27 ...

Page 9

Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions o characteristics (“Beschaffenheitsgarantie”). With ...

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