ipd079n06l3g Infineon Technologies Corporation, ipd079n06l3g Datasheet
ipd079n06l3g
Available stocks
Related parts for ipd079n06l3g
ipd079n06l3g Summary of contents
Page 1
Type (TM) OptiMOS 3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS ...
Page 2
Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 5) ...
Page 3
Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output ...
Page 4
Power dissipation P =f(T ) tot C 100 Safe operating area I =f =25 ° parameter limited by on-state ...
Page 5
Typ. output characteristics I =f =25 ° parameter 200 160 120 Typ. transfer characteristics I =f |>2|I |R ...
Page 6
Drain-source on-state resistance =10 V DS(on max -60 - Typ. capacitances C =f MHz ...
Page 7
Avalanche characteristics =25 Ω parameter: T j(start) 100 150 ° Drain-source breakdown voltage V =f BR(DSS ...
Page 8
PG-TO-252-3 Rev. 2.0 Packaging: page 8 IPD079N06L3 G 2008-12-09 ...
Page 9
Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...