ipd06n03lzg Infineon Technologies Corporation, ipd06n03lzg Datasheet

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OptiMOS ® 2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC • N-channel, logic level • Excellent gate charge x R DS(on) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; ...

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Parameter Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 1) ...

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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...

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Power dissipation P =f(T ) tot Safe operating area I =f =25 ° parameter 1000 ...

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Typ. output characteristics I =f =25 ° parameter 100 4 Typ. transfer characteristics I =f(V ...

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Drain-source on-state resistance =10 V DS(on -60 - Typ. capacitances C =f(V ); ...

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Avalanche characteristics =25 Ω parameter: T j(start) 100 150 ° Drain-source breakdown voltage V =f BR(DSS ...

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Package Outline PG-TO252-3-11: Outline Rev. 1.7 IPS06N03LZ G PG-TO252-3-11 page 8 IPD06N03LZ G IPU06N03LZ G 2008-04-14 ...

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Package Outline Rev. 1.7 IPS06N03LZ G PG-TO251-3-11 page 9 IPD06N03LZ G IPU06N03LZ G 2008-04-14 ...

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Package Outline Rev. 1.7 IPS06N03LZ G PG-TO251-3-21 page 10 IPD06N03LZ G IPU06N03LZ G 2008-04-14 ...

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Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...