ipd06n03lag Infineon Technologies Corporation, ipd06n03lag Datasheet

ipd06n03lag

Manufacturer Part Number

ipd06n03lag

Description

N-channel Mosfet 20v?300v Power Transistor Power Mosfet

Manufacturer

Infineon Technologies Corporation

Datasheet

1.IPD06N03LAG.pdf (12 pages)

Available stocks

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Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IPD06N03LAG

Manufacturer:

INF

Quantity:

216

Company:

BOSTOCK HK LIMITED

Part Number:

IPD06N03LAG

Manufacturer:

INFINEON

Quantity:

8 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

IPD06N03LAG

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

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Rev. 2.2

Features

• Ideal for high-frequency dc/dc converters

• Qualified according to JEDEC

• N-channel, logic level

• Excellent gate charge x R

• Superior thermal resistance

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

Maximum ratings, at T

Parameter

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Reverse diode dv /dt

Gate source voltage

Power dissipation

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

OptiMOS

Type

Package

Marking

2 Power-Transistor

IPD06N03LA

P-TO252-3-11

06N03LA

=25 °C, unless otherwise specified

DS(on)

product (FOM)

for target application

Symbol Conditions

dv /dt

D,pulse

tot

, T

IPF06N03LA

P-TO252-3-23

06N03LA

stg

di /dt =200 A/µs,

page 1

j,max

=45 A, R

=50 A, V

=25 °C

=100 °C

=25 °C

=175 °C

=20 V,

=25 Ω

Product Summary

IPS06N03LA

P-TO251-3-11

06N03LA

DS(on),max

IPS06N03LA G

IPD06N03LA G

(SMD version)

-55 ... 175

55/175/56

Value

350

225

±20

IPU06N03LA

P-TO251-3-1

06N03LA

IPU06N03LA G

IPF06N03LA G

5.7

Unit

kV/µs

°C

mΩ

2008-04-14

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