ipd031n03mg Infineon Technologies Corporation, ipd031n03mg Datasheet
ipd031n03mg
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ipd031n03mg Summary of contents
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Type OptiMOS ® 3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC • N-channel, logic level • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) ...
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Maximum ratings =25 °C, unless otherwise specified j Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Parameter Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB Electrical characteristics ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...
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Power dissipation P =f(T ) tot C 100 Safe operating area I =f =25 ° parameter limited by on-state ...
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Typ. output characteristics I =f =25 ° parameter 200 4.5 V 160 120 Typ. transfer characteristics I =f |>2|I ...
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Drain-source on-state resistance =10 V DS(on -60 - Typ. capacitances C =f ...
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Avalanche characteristics =25 Ω parameter: T j(start) 100 150 ° Drain-source breakdown voltage V =f BR(DSS ...
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Package Outline Rev. 1.03 PG-TO252-3-11 page 8 IPD031N03L G IPS031N03L G 2008-04-15 ...
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Package Outline Rev. 1.03 PG-TO251-3-11 page 9 IPD031N03L G IPS031N03L G 2008-04-15 ...
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Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...