ao3438 Alpha & Omega Semiconductor, ao3438 Datasheet
ao3438
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ao3438 Summary of contents
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... AO3438 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3438 uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AO3438 and AO3438L are eletrically identical ...
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... AO3438 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AO3438 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 16 4.5V 2. (Volts) DS Figure 1: On-Region Characteristics 120 100 V =1. (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 120 100 80 60 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. ...
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... AO3438 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =10V 0.5 1 1.5 Q (nC) g Figure 7: Gate-Charge Characteristics 100.00 T =150°C J(Max) T =25°C A 10.00 1.00 R DS(ON) limited 0.10 0.01 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA θ ...