ao3410 ETC-unknow, ao3410 Datasheet

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ao3410

Manufacturer Part Number
ao3410
Description
N-channel Enhancement Mode Field Effect Transistor
Manufacturer
ETC-unknow
Datasheet

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Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO3410 uses advanced trench technology to
provide excellent R
operation with gate voltages as low as 1.8V and as
high as 12V. This device is suitable for use as a load
switch or in PWM applications.
AO3410
N-Channel Enhancement Mode Field Effect Transistor
A
A
DS(ON)
G
S
B
T
T
T
T
(SOT-23)
Top View
A
A
A
A
TO-236
=25°C
=70°C
=25°C
=70°C
, low gate charge and
C
A
A
A
D
=25°C unless otherwise noted
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
G
Symbol
Features
V
I
R
R
R
R
R
D
R
DS
DS(ON)
DS(ON)
DS(ON)
DS(ON)
θJA
θJL
= 5.8 A
D
S
(V) = 30V
< 28mΩ (V
< 33mΩ (V
< 52mΩ (V
< 70mΩ (V
Maximum
-55 to 150
±12
Typ
5.8
4.9
1.4
30
30
65
85
43
1
GS
GS
GS
GS
= 10V)
= 4.5V)
= 2.5V)
= 1.8V)
Max
125
90
60
August 2002
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A

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ao3410 Summary of contents

Page 1

... AO3410 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3410 uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 1.8V and as high as 12V. This device is suitable for use as a load switch or in PWM applications. TO-236 ...

Page 2

... AO3410 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

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