stn4392 Stanson Technology Co., Ltd., stn4392 Datasheet

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stn4392

Manufacturer Part Number
stn4392
Description
N Channel Enhancement Mode Mosfet
Manufacturer
Stanson Technology Co., Ltd.
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
STN4392
Manufacturer:
STANSON
Quantity:
20 000
Part Number:
stn4392S8RG
Manufacturer:
ST
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Part Number:
stn4392S8RG
Manufacturer:
STANSON
Quantity:
20 000
DESCRIPTION
DESCRIPTION
DESCRIPTION
DESCRIPTION
STN4392 is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as power management and other
battery powered circuits where high-side switching.
PIN
PIN
PIN
PIN CONFIGURATION
SOP-8
SOP-8
SOP-8
SOP-8
PART
PART
PART
PART MARKING
SOP-8
SOP-8
SOP-8
SOP-8
Y Y Y Y :Year
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Year
Year
Year Code
CONFIGURATION
CONFIGURATION
CONFIGURATION
MARKING
MARKING
MARKING
Code A A A A :Process
Code
Code
STN4392
STN4392
STN4392
STN4392
Y Y Y Y A A A A
Process
Process
Process Code
Code
Code
Code
N Channel Enhancement Mode MOSFET
FEATURE
FEATURE
FEATURE
FEATURE
extremely low R
30V/13A, R
30V/10A, R
Super high density cell design for
Exceptional on-resistance and
maximum DC current capability
SOP-8 package design
STN4
STN4
STN4
STN439
Copyright © 2007, Stanson Corp.
DS(ON)
DS(ON)
@V
@V
DS(ON)
STN4392 2009. V1
GS
= 8mΩ (Typ.)
= 12mΩ
GS
39
39
392 2 2 2
= 10V
= 4.5V
13A

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stn4392 Summary of contents

Page 1

... DESCRIPTION DESCRIPTION DESCRIPTION STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching ...

Page 2

... Symbol Typical Typical Typical Typical VDSS VGSS ±20 TA=25℃ ID TA=70℃ IDM IS TA=25℃ PD TA=70 ℃ TJ -55/150 TSTG -55/150 RθJA Copyright © 2007, Stanson Corp. 39 392 13A Unit Unit Unit Unit 5.6 A 2.5 W 1.6 ℃ ℃ ℃ STN4392 2009. V1 ...

Page 3

... Min Typ Max Unit Min Min Min Typ Typ Typ Max Max Max Unit Unit Unit 30 V 1.0 3.0 V ±100 100 6 8 mΩ 1.0 1 1500 320 pF 200 Copyright © 2007, Stanson Corp. STN4392 2009. V1 ...

Page 4

... TYPICAL TYPICAL CHARACTERICTICS CHARACTERICTICS TYPICAL TYPICAL CHARACTERICTICS CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN4 STN4 39 39 392 STN4 STN439 N Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. STN4392 2009. V1 13A ...

Page 5

... TYPICAL TYPICAL CHARACTERICTICS CHARACTERICTICS TYPICAL TYPICAL CHARACTERICTICS CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN4 STN4 39 39 392 STN4 STN439 N Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. STN4392 2009. V1 13A ...

Page 6

... TYPICAL TYPICAL CHARACTERICTICS CHARACTERICTICS TYPICAL TYPICAL CHARACTERICTICS CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN4 STN4 39 39 392 STN4 STN439 N Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. STN4392 2009. V1 13A ...

Page 7

... PACKAGE PACKAGE OUTLINE OUTLINE SOP-8P SOP-8P PACKAGE PACKAGE OUTLINE OUTLINE SOP-8P SOP-8P STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN4 STN4 39 39 392 STN4 STN439 N Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. STN4392 2009. V1 13A ...

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