stn4526 Stanson Technology Co., Ltd., stn4526 Datasheet
stn4526
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stn4526 Summary of contents
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... DESCRIPTION STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching ...
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... Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN4526 N Channel Enhancement Mode MOSFET Symbol Typical VDSS VGSS ±20 TA=25℃ ID 10.0 TA=70 ℃ 8.0 IDM IS 2.3 TA=25℃ 2.5 PD TA=70 ℃ 1.6 TJ 150 TSTG -55/150 RθJA Copyright © 2007, Stanson Corp. 10.0A Unit ℃ ℃ ℃ STN4526 2007. V1 ...
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... V =20V,R = 4Ω =5.0A,V =-10V D GEN d(off) R =1Ω STN4526 10.0A Min Typ Max Unit 30 V 0.5 1 ±100 mΩ 0.8 1 2.8 nC 3.2 850 110 Copyright © 2007, Stanson Corp. STN4526 2007. V1 ...
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... TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN4526 N Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. STN4526 2007. V1 10.0A ...
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... TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN4526 N Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. STN4526 2007. V1 10.0A ...
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... PACKAGE OUTLINE SOP-8P STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN4526 N Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. STN4526 2007. V1 10.0A ...