stn4972s8tg Stanson Technology Co., Ltd., stn4972s8tg Datasheet

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stn4972s8tg

Manufacturer Part Number
stn4972s8tg
Description
Dual N Channel Enhancement Mode Mosfet
Manufacturer
Stanson Technology Co., Ltd.
Datasheet
DESCRIPTION
STN4972 is the Dual N-Channel logic enhancement mode power field effect
transistors which are produced using high cell density DMOS trench technology. It is
suitable for the power management applications in the portable or battery powered
system.
PIN CONFIGURATION
SOP-8
PART MARKING
SOP-8
ORDERING INFORMATION
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
※ STN9972S8RG
※ STN9972S8TG
※ Process Code : A ~ Z ; a ~ z
STN4972S8RG
STN4972S8TG
Part Number
S8 : SOP-8 ; T : Tube ; G : Pb – Free
S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free
Package
SOP-8
SOP-8
Dual N Channel Enhancement Mode MOSFET
FEATURE
30V/8.5A, R
30V/7.8A, R
Super high density cell design for
extremely low R
Exceptional on-resistance and maximum
DC current capability
SOP-8 package design
STN4972
DS(ON)
DS(ON)
Copyright © 2007, Stanson Corp.
Part Marking
DS(ON)
= 14mΩ@VGS = 10V
STN4972
STN4972
= 18mΩ@VGS = 4.5V
STN4972 2008. V1
8.5A

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stn4972s8tg Summary of contents

Page 1

... PIN CONFIGURATION SOP-8 PART MARKING SOP-8 ORDERING INFORMATION Part Number STN4972S8RG STN4972S8TG ※ Process Code : ※ STN9972S8RG S8 : SOP Tape Reel ; – Free ※ STN9972S8TG S8 : SOP Tube ; – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www ...

Page 2

ABSOULTE MAXIMUM RATINGS ( ℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150 ℃ ) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction ...

Page 3

ELECTRICAL CHARACTERISTICS ( ℃ Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Forward Tran Conductance Diode Forward Voltage Dynamic Total ...

Page 4

TYPICAL CHARACTERICTICS (25℃ Unless Note) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN4972 Dual N Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. 8.5A STN4972 2008. V1 ...

Page 5

TYPICAL CHARACTERICTICS (25℃ Unless Note) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN4972 Dual N Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. 8.5A STN4972 2008. V1 ...

Page 6

TYPICAL CHARACTERICTICS (25℃ Unless Note) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN4972 Dual N Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. 8.5A STN4972 2008. V1 ...

Page 7

SOP-8 PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN4972 Dual N Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. 8.5A STN4972 2008. V1 ...

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