rjk2017dpe Renesas Electronics Corporation., rjk2017dpe Datasheet

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rjk2017dpe

Manufacturer Part Number
rjk2017dpe
Description
Silicon N Channel Mos Fet High Speed Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
RJK2017DPE
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
REJ03G1589-0400 Rev.4.00 Dec 02, 2009
Page 1 of 6
R
DS(on)
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
= 0.036 Ω typ. (at I
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
Item
D
1
= 22.5 A, V
2
3
4
GS
= 10 V, Ta = 25 °C)
I
I
DR (pulse)
D (pulse)
Pch
Symbol
E
I
AP
θch-c
AR
V
V
Tstg
Tch
I
DSS
GSS
I
DR
Note3
D
Note3
Note2
Note1
Note1
G
–55 to +150
D
S
Ratings
1.25
200
±30
135
135
100
150
9.6
45
45
12
1. Gate
2. Drain
3. Source
4. Drain
REJ03G1589-0400
°C/W
Dec 02, 2009
Unit
mJ
°C
°C
W
V
V
A
A
A
A
A
(Ta = 25°C)
Rev.4.00

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rjk2017dpe Summary of contents

Page 1

... RJK2017DPE Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance = 0.036 Ω typ DS(on) D • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-( Absolute Maximum Ratings Item ...

Page 2

... RJK2017DPE Electrical Characteristics Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time ...

Page 3

... RJK2017DPE Main Characteristics Maximum Safe Operation Area 1000 100 10 1 Operation in this area is limited by R DS(on) 0 25°C 1 shot 0.01 0 Drain to Source Voltage V Typical Transfer Characteristics 100 Pulse Test 75°C 25°C 1 −25°C 0 Gate to Source Voltage V Static Drain to Source on State Resistance vs ...

Page 4

... RJK2017DPE Typical Capacitance vs. Drain to Source Voltage 10000 1000 100 MHz Ta = 25° Drain to Source Voltage Reverse Drain Current vs. Source to Drain Voltage (Typical) 100 25°C Pulse Test 0.4 0.8 1.2 Source to Drain Voltage V REJ03G1589-0400 Rev.4.00 Dec 02, 2009 ...

Page 5

... RJK2017DPE Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.3 0.1 0.03 0.01 10 μ 100 μ Switching Time Test Circuit Vin Monitor D.U.T. 10 Ω Vin 10 V REJ03G1589-0400 Rev.4.00 Dec 02, 2009 Page θch – c(t) = γs (t) • θch – c θch – 1.25°C/ 25° 100 m ...

Page 6

... RJK2017DPE Package Dimensions Package Name JEITA Package Code RENESAS Code LDPAK(S)-(1) SC-83 PRSS0004AE-B 10.2 ± 0.3 1.3 ± 0.2 2.54 ± 0.5 Ordering Information Part No. RJK2017DPE-00-J3 1000 pcs REJ03G1589-0400 Rev.4.00 Dec 02, 2009 Page Previous Code MASS[Typ.] LDPAK(S)-(1) / LDPAK(S)-(1)V 1.30g 4.44 ± 0.2 1.3 ± 0.15 2.49 ± 0.2 + 0.2 0.1 – 0.1 1.37 ± 0.2 0.4 ± 0.1 + 0.2 0.86 – 0.1 2.54 ± 0.5 ...

Page 7

Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained ...

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