fqu18n20v2 Fairchild Semiconductor, fqu18n20v2 Datasheet

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fqu18n20v2

Manufacturer Part Number
fqu18n20v2
Description
Fqd18n20v2 / Fqu18n20v2 200v N-channel Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number
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Quantity
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Part Number:
FQU18N20V2
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2002 Fairchild Semiconductor Corporation
FQD18N20V2 / FQU18N20V2
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters, and DC motor
control.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
D-PAK
FQD Series
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
Parameter
Parameter
= 25°C) *
= 25°C)
G
T
D
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 15A, 200V, R
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
I-PAK
FQU Series
FQD18N20V2 / FQU18N20V2
DS(on)
Typ
--
--
--
-55 to +150
= 0.14
9.75
0.67
340
300
200
8.3
6.5
2.5
15
60
15
83
30
G
@V
!
!
Max
110
1.5
50
GS
QFET
! "
! "
= 10 V
!
!
!
!
S
D
"
"
"
"
"
"
Rev. B1, August 2002
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
TM

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fqu18n20v2 Summary of contents

Page 1

... A = 25°C) C Parameter QFET = 0. DS(on " " ! " ! " G " " " " FQD18N20V2 / FQU18N20V2 Units 200 15 9. 340 mJ 15 8.3 mJ 6.5 V/ns 2.5 83 0.67 W/°C -55 to +150 300 Typ Max Units -- 1.5 °C °C/W -- 110 °C/W Rev. B1, August 2002 ...

Page 2

... ≤ 18A, di/dt ≤ 200A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2002 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25°C ...

Page 3

... Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2500 2000 1500 1000 C 500 C rss Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2002 Fairchild Semiconductor Corporation ※ Notes : 1. 250 μ s Pulse Test = 25 ℃ 10V ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2002 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0.5 = 250 μ 0.0 100 150 200 -100 o C] Figure 8 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2002 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2002 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type ...

Page 7

... Package Dimensions 6.60 5.34 (0.50) (4.34) MAX0.96 2.30TYP [2.30 0.20] ©2002 Fairchild Semiconductor Corporation DPAK 0.20 0.30 (0.50) 0.76 0.10 2.30TYP [2.30 0.20] 2.30 0.10 0.50 0.10 0.50 0.10 1.02 0.20 2.30 0.20 6.60 0.20 (5.34) (5.04) (1.50) (2XR0.25) 0.76 0.10 Dimensions in Millimeters Rev. B1, August 2002 ...

Page 8

... Package Dimensions 6.60 0.20 5.34 0.20 (0.50) (4.34) MAX0.96 0.76 0.10 2.30TYP [2.30 0.20] ©2002 Fairchild Semiconductor Corporation (Continued) IPAK (0.50) 2.30TYP [2.30 0.20] 2.30 0.20 0.50 0.10 0.50 0.10 Dimensions in Millimeters Rev. B1, August 2002 ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...

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