fdb6644s Fairchild Semiconductor, fdb6644s Datasheet
fdb6644s
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fdb6644s Summary of contents
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... R and low gate charge. The FDP6644S includes DS(ON) an integrated Schottky diode using monolithic SyncFET technology. The performance of the FDP6644S/FDB6644S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6644/FDB6644 in parallel with a Schottky diode. G TO-220 D FDP Series S Absolute Maximum Ratings Symbol ...
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... 300 A/µs (Note Typ Max Units V 23 mV/°C 500 uA 100 nA –100 –9.5 mV/° mΩ 11 2851 pF 540 pF 196 0.48 0 FDP6644S/FDB6644S Rev C1 (W) ...
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... V Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3.5V 4.5V 6.0V 10V 120 I , DRAIN CURRENT ( 14A 125 GATE TO SOURCE VOLTAGE ( -55 C 0.2 0.4 0.6 0.8 , BODY DIODE FORWARD VOLTAGE (V) SD FDP6644S/FDB6644S Rev C1 (W) ...
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... V , DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 2.1°C/W θ 25° 100 t , TIME (sec) 1 Power Dissipation. R ( θJC θ 2.1 °C/W θ θJC Duty Cycle 100 1000 FDP6644S/FDB6644S Rev C1 (W) 30 1000 ...
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... This diode high temperature and high reverse voltage. This will increase the power in the device. Figure 14. SyncFET diode reverse leakage versus drain-source voltage and 0.01 0.001 0.0001 0.00001 0 temperature 100 REVERSE VOLTAGE (V) DS FDP6644S/FDB6644S Rev C1 (W) ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...