bs170-d27z Fairchild Semiconductor, bs170-d27z Datasheet

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bs170-d27z

Manufacturer Part Number
bs170-d27z
Description
Bs170/mmbf170 N-channel Enhancement Mode Field Effect Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
Absolute Maximum Ratings
Symbol
V
V
V
I
P
T
T
THERMAL CHARACTERISTICS
R
© 1997 Fairchild Semiconductor Corporation
These
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. These products have been
designed to minimize on-state resistance while provide
rugged, reliable, and fast switching performance. They can
be used in most applications requiring up to 500mA DC.
These products are particularly suited for low voltage, low
current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
____________
D
General Description
DSS
DGR
GSS
D
J
L
N-Channel Enhancement Mode Field Effect Transistor
BS170 / MMBF170
,T
JA
STG
Parameter
Drain-Source Voltage
Drain-Gate Voltage (R
Gate-Source Voltage
Drain Current - Continuous
Maximum Power Dissipation
Derate Above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
Thermal Resistacne, Junction-to-Ambient
N-Channel enhancement mode field effect
___________________________________________________________________
- Pulsed
GS
< 1M )
T
A
= 25°C unless otherwise noted
Features
BS170
1200
500
830
150
High density cell design for low R
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
6.6
-55 to 150
± 20
300
60
60
G
MMBF170
500
800
300
417
2.4
DS(ON)
.
BS170 Rev. C / MMBF170 Rev. D
D
S
April 1995
mW/°C
Units
°C/W
mW
mA
°C
°C
V
V
V

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bs170-d27z Summary of contents

Page 1

... Rugged and reliable. High saturation current capability 25°C unless otherwise noted A BS170 500 1200 830 6.6 150 April 1995 . DS(ON MMBF170 60 60 ± 20 500 800 300 2.4 mW/°C -55 to 150 300 417 BS170 Rev MMBF170 Rev. D Units °C °C °C/W ...

Page 2

... GEN 500 mA, MMBF170 GEN Type Min Typ Max Units All 60 V All 0.5 µA All 10 nA All 0.8 2 All 1.2 5 320 mS 320 All All All BS170 Rev MMBF170 Rev. D ...

Page 3

... DRAIN CURRENT (A) D and Drain Current 10V 125°C J 25°C -55°C 0.4 0.8 1.2 1 DRAIN CURRENT (A) D Current and Temperature - JUNCTION TEMPERATURE (° Temperature BS170 Rev MMBF170 Rev. D 8.0 9 ...

Page 4

... Input 10% . Figure 12. Switching Waveforms 125°C J 25°C -55°C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE ( 25V 0.4 0.8 1.2 1 GATE CHARGE (nC off t t d(off) r 90% 90% 10% 10% 90% 50% 50% Pulse Width . BS170 Rev MMBF170 Rev Inverted ...

Page 5

... V , DRAIN-SOURCE VOLTAGE (V) DS Figure 13. BS170 Maximum Safe Operating Area 0.5 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.01 0.02 Single Pulse 0.01 0.0001 0.001 Figure 15. TO-92, BS170 Transient Thermal Response Curve 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.01 0.01 Single Pulse 0.002 0.001 0.0001 0.001 Figure 16. SOT-23, MMBF170 Transient Thermal Response Curve (continued 0.5 0.1 0. SINGLE PULSE 0 ...

Page 6

... PROELECTRON SERIES), 96 L34Z TO-92 STANDARD NO LEADCLIP STRAIGHT FOR: PKG 94 (PROELECTRON SERIES BCXXX, BFXXX, BSRXXX), 97, 98 FSCINT Label ©2001 Fairchild Semiconductor Corporation TAPE and REEL OPTION See Fig 2.0 for various Reeling Styles 5 Reels per Intermediate Box F63TNR Label Customized Label AMMO PACK OPTION See Fig 3 ...

Page 7

TO-92 Tape and Reel Data, continued TO-92 Reeling Style Configuration: Figure 2.0 Machine Option “A” (H) Style “A”, D26Z, D70Z (s/h) TO-92 Radial Ammo Packaging Configuration: Figure 3.0 FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE ...

Page 8

TO-92 Tape and Reel Data, continued TO-92 Tape and Reel Taping Dimension Configuration: Figure 4 User Direction of Feed TO-92 Reel Configuration: Figure 5.0 ELECT ROSTATIC SEN SITIVE D EVICES F63TNR Label ...

Page 9

... TO-92 Package Dimensions TO-92; TO-18 Reverse Lead Form (J35Z Option) (FS PKG Code 92, 94, 96) ©2000 Fairchild Semiconductor International 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0. Note: All package transistors are leadformed to this configuration prior to bulk shipment. Order L34Z option if in-line leads are preferred on package ...

Page 10

... Human Readable Label sample SOT-23 Tape Leader and Trailer Configuration: Figure 2. 0 Carrier Tape Cover Tape Trailer Tape 300mm minimum or 75 empt y poc kets ©2000 Fairchild Semiconductor International Antistatic Cover Tape Human Readable Embossed Label Carrier Tape 3P 3P SOT-23 Unit Orientation ...

Page 11

SOT-23 Tape and Reel Data, continued SOT-23 Embossed Carrier Tape Configuration: Figure 3 Pkg type SOT-23 3.15 2.77 8.0 1.55 +/-0.10 +/-0.10 +/-0.3 +/-0.05 (8mm) Notes: A0, B0, and K0 dimensions ...

Page 12

... SOT-23 Package Dimensions SOT-23 (FS PKG Code 49) ©2000 Fairchild Semiconductor International 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0082 September 1998, Rev. A1 ...

Page 13

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...

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