gt60j323h TOSHIBA Semiconductor CORPORATION, gt60j323h Datasheet

gt60j323h

Manufacturer Part Number

gt60j323h

Description

Toshiba Insulated Gate Bipolar Transistor Silicon N Channel Igbt

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.GT60J323H.pdf (6 pages)

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Current Resonance Inverter Switching Application

Induction Heating Cooking Appliances

Induction Heating Appliances

•

Absolute Maximum Ratings

Thermal Characteristics

Equivalent Circuit

Enhancement mode type

High speed : t

Low saturation voltage: V

FRD included between emitter and collector

Fourth generation IGBT

TO-3P(LH) (Toshiba package name)

Collector-emitter voltage

Gate-emitter voltage

Continuous collector

current

Pulsed collector current

Diode forward current

Collector power

dissipation

Junction temperature

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

Thermal resistance (IGBT)

Thermal resistance (diode)

Gate

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Characteristics

= 0.12 μs (typ.) (I

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

Collector

Emitter

@ Tc = 100°C

@ Tc = 25°C

Pulsed

@ Tc = 100°C

@ Tc = 25°C

CE (sat)

= 2.1 V (typ.) (I

= 60A)

(Ta = 25°C)

GT60J323H

Symbol

th (j-c)

GES

CES

stg

−55 to 150

= 60A)

Rating

0.74

1.56

Max

600

±25

120

170

150

Marking

60J323H

TOSHIBA

°C/W

JAPAN

Unit

°C

Weight: 9.75 g (typ.)

JEDEC

JEITA

TOSHIBA

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

GT60J323H

2-21F2C

2006-11-01

―

Unit: mm

Related parts for gt60j323h

gt60j323h Summary of contents

Page 1

... T −55 to 150 °C stg Symbol Max Unit R 0.74 °C/W th (j-c) R 1.56 °C/W th (j-c) Marking TOSHIBA 60J323H JAPAN 1 GT60J323H Unit: mm JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.75 g (typ.) Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2006-11-01 ...

Page 2

... di/dt = −100 A/μ 90 90 (off off 2 GT60J323H Min Typ. Max ― ― ±500 ― ― 1.0 3.0 ― 6.0 ― 2.1 2.9 ― 4800 ― 0.26 ― 0.39 ― 0.12 0.21 (Note 1) ― 0.41 ― 1.4 2.0 ― 0.1 ...

Page 3

... Collector-emitter voltage V CE (V) 120 Common emitter ｴﾐｯﾀ接地 V =5V V =5V 8 100 6 100 140 3 GT60J323H I – 8.5 8 7 – Tc=125 25 - ...

Page 4

... T j ≤ 125° 1000 Ω 500 300 100 10000 1 (V) Collector-emitter voltage V 4 GT60J323H C – ies C oes C res 1 10 100 1000 (V) CE Switching Time – toff tｒ ...

Page 5

... 2 Forward current I 200 100 300 500 0 5 GT60J323H r – ( 25°C Diode stage IGBT stage − 3 − 2 − Pulse width t ( – ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 GT60J323H 20070701-EN 2006-11-01 ...

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