sid400n12 Sirectifier Semiconductors, sid400n12 Datasheet

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sid400n12

Manufacturer Part Number
sid400n12
Description
Npt Igbt Modules
Manufacturer
Sirectifier Semiconductors
Datasheet
Absolute Maximum Ratings
IGBT
Inverse Diode
T
Symbol
V
I
V
I
Vj,
I
I
F
CRM
V
FSM
FRM
I
CES
GES
=-I
C
(T
isol
stg
C
)
T
T
T
T
T
AC, 1min
t
P
C
C
OPERATION
C
C
= 25(80)
= 25(125)
=10ms; sin.;T
= 25(80)
= 25(80)
o
< _ T
o
o
C
C
C, t
o
C, t
stg
P
j
=150
P
=1ms
=1ms
Conditions
o
C
NPT IGBT Modules
SID400N12
Dimensions in mm (1mm = 0.0394")
T
C
= 25
_
40...+150(125)
800(660)
400(330)
800(660)
o
Values
390(260)
1200
C , unless otherwise specified
_
+20
4000
2900
Units
o
A
A
A
C
V
V
V
A
A

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sid400n12 Summary of contents

Page 1

... Inverse Diode 25(80 25(125 =1ms C P FRM I t =10ms; sin.;T =150 FSM P j SID400N12 NPT IGBT Modules Conditions o C Dimensions in mm (1mm = 0.0394" unless otherwise specified C Values Units 1200 V 400(330) A 800(660 + 40...+150(125) C ...

Page 2

... Thermal Characteristics R per IGBT th(j-c) R per Inverse Diode th(j-c)D R per module th(c-s) Mechanical Data M to heatsink terminals SID400N12 NPT IGBT Modules Conditions 25(125 125 25(125 unless otherwise specified C min ...

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