r6015fnx ROHM Co. Ltd., r6015fnx Datasheet

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r6015fnx

Manufacturer Part Number
r6015fnx
Description
10v Drive Nch Mosfet
Manufacturer
ROHM Co. Ltd.
Datasheet
  V
*1 Pw10s, Duty cycle1%
*2 L≒500H, V
*3 Limited only by maximum temperature allowed.
Silicon N-channel MOSFET
1) Fast reverse recovery time (t
2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage
5) Drive circuits can be simple.
6) Parallel use is easy.
Switching
Type
R6015FNX
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Avalanche Current
Avalanche Energy
Power dissipation (Tc=25℃)
Channel temperature
Range of storage temperature
Channel to Case
 Structure
Features
Application
Packaging specifications
Absolute maximum ratings (Ta  25°C)
 Thermal resistance
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
10V Drive Nch MOSFET
R6015FNX
GSS
garanteed to be ±30V .
Package
Code
Basic ordering unit (pieces)
DD
=50V, Rg=25, starting Tch=25°C
Parameter
Parameter
Continuous
Pulsed
Continuous
Pulsed
rr
)
Rth (ch-c)
Symbol
Symbol
Bulk
V
V
Tstg
500
Tch
E
I
I
I
P
DSS
GSS
I
I
DP
SP
AS
-
D
S
AS
D
*3
*1
*3
*1
*2
*2
55 to 150
Limits
Limits
600
30
15
60
150
7.5
2.5
15
60
15
50
1/6
C / W
Unit
Unit
mJ
C
C
W
V
V
A
A
A
A
A
 Dimensions (Unit : mm)
 Inner circuit
TO-220FM
(1) Gate
(2) Drain
(3) Source
2.54
(1)
1.3
(1)
10.0
(2) (3)
1 BODY DIODE
Data Sheet
1.2
2.54
0.8
(2)
φ 3.2
2011.08 - Rev.A
0.75
∗1
4.5
(3)
2.8
2.6

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r6015fnx Summary of contents

Page 1

... GSS 5) Drive circuits can be simple. 6) Parallel use is easy. Application Switching Packaging specifications Package Type Code Basic ordering unit (pieces) R6015FNX Absolute maximum ratings (Ta  25°C) Parameter Drain-source voltage Gate-source voltage Continuous Drain current Pulsed Continuous Source current (Body Diode) ...

Page 2

... R6015FNX  Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage I Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current I Gate threshold voltage V GS (th) Static drain-source on-state R DS (on) resistance Forward transfer admittance l Y Input capacitance C Output capacitance C Reverse transfer capacitance C Turn-on delay time ...

Page 3

... R6015FNX Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ =25°C a Pulsed =6. 0.2 0.4 Drain-Source Voltage : V Fig.3 Typical Transfer Characteristics 100 V =10V DS pulsed 10 T =125° =75° =25° =-25° 0.1 0.01 0.001 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 Gate-Source Voltage : V Fig.5 Static Drain-Source On-State Resistance vs. Drain Current ...

Page 4

... R6015FNX Fig.7 Forward Transfer Admittance vs. Drain Current 100 V =10V DS pulsed 10 1 0.1 0.01 0.01 0.1 1 Drain Current : I Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 1 T =25°C a Pulsed 0.8 0.6 I =15A D I =7.5A D 0.4 0 Gate-Source Voltage : V Fig.11 Dynamic Input Characteristics 12 T =25° =300V DD I =15A ...

Page 5

... R6015FNX Fig.13 Reverse Recovery Time vs. Source Current 1000 T =25° =0V gs di/dt=100A/us Pulsed 100 Source Current : I Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width 10 T =25°C a Single Pulse 1 0.1 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. ...

Page 6

... R6015FNX  Measurement circuits D.U. Fig.1-1 Switching Time Measurement Circuit D.U.T. I G(Const Fig.2-1 Gate Charge Measurement Circuit D.U. Fig.3-1 Avalanche Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. ...

Page 7

ROHM Co., Ltd. All rights reserved Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ Notice ...

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