irhyb67134cm International Rectifier Corp., irhyb67134cm Datasheet

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irhyb67134cm

Manufacturer Part Number
irhyb67134cm
Description
150v 300krad Hi-rel Single N-channel Tid Hardened Mosfet In A Low-ohmic To-257aa Package
Manufacturer
International Rectifier Corp.
Datasheet
International Rectifier’s R6
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm
very low
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
For footnotes refer to the last page
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
Absolute Maximum Ratings
I D @ V GS = 12V, T C = 100°C Continuous Drain Current
IRHYB67134CM 100K Rads (Si)
IRHYB63134CM 300K Rads (Si)
I D @ V GS = 12V, T C = 25°C
www.irf.com
Part Number
P D @ T C = 25°C
R DS(on)
T STG
dv/dt
V GS
E AR
E AS
I DM
I AR
T J
and faster switching times reduces
Radiation Level R
2
TM
). Their combination of
Parameter
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
technology provides
0.09Ω
0.09Ω
DS(on)
19A
19A
I
D
Features:
n
n
n
n
n
n
n
n
n
n
300 (0.063 in. /1.6 mm from case for 10s)
Low R
Fast Switching
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Ceramic Eyelets
Light Weight
Single Event Effect (SEE) Hardened
Hermetically Sealed
Electrically Isolated
DS(on)
IRHYB67134CM
150V, N-CHANNEL
-55 to 150
3.7 (Typical)
Low-Ohmic
±20
0.6
7.5
19
12
76
75
67
19
7.8
TECHNOLOGY
Pre-Irradiation
PD-96997
Units
W/°C
V/ns
mJ
mJ
o
A
W
V
A
C
g
1

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irhyb67134cm Summary of contents

Page 1

... RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) Product Summary Part Number Radiation Level R IRHYB67134CM 100K Rads (Si) IRHYB63134CM 300K Rads (Si) International Rectifier’s R6 technology provides TM superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for ...

Page 2

... IRHYB67134CM Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current I GSS Gate-to-Source Leakage Forward I GSS Gate-to-Source Leakage Reverse ...

Page 3

... Resistance (Low Ohmic TO-257) V Diode Forward Voltage SD Part numbers IRHYB67134CM and IRHYB63134CM International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Tables for Single Event Effect Safe Operating Area ...

Page 4

... IRHYB67134CM 1000 VGS TOP 15V 12V 10V 9.0V 100 8.0V 7.0V 6.0V BOTTOM 5. 5.0V 60µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 150° 25° 50V 60µs PULSE WIDTH 1 Gate-to-Source Voltage (V) Fig 3 ...

Page 5

... Fig 6. Typical Gate Charge Vs. 1000 100 25° 150° Single Pulse 0.1 1 1.0 1.2 1.4 Fig 8. Maximum Safe Operating Area IRHYB67134CM 120V 75V 30V FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED (on) 100µ ...

Page 6

... IRHYB67134CM 100 Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 0.01 0.001 1E-006 1E-005 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ...

Page 7

... Starting Junction Temperature (°C) (BR)DSS Fig 12c. Maximum Avalanche Energy Same Type as D.U.T. 12V V GS Fig 13b. Gate Charge Test Circuit IRHYB67134CM I D TOP 19A 12A BOTTOM 8. 100 125 150 Vs. Drain Current Current Regulator 50KΩ ...

Page 8

... IRHYB67134CM Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á 25V, starting 25°C, L= 0.37mH Peak 19A 12V Â ≤ 19A, di/dt ≤ 570A/µ ≤ 150V ≤ 150°C Case Outline and Dimensions — Low-Ohmic TO-257AA (Tab-less) 10 ...

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