irhna63160 International Rectifier Corp., irhna63160 Datasheet
irhna63160
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irhna63160 Summary of contents
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... RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA67160 100K Rads (Si) IRHNA63160 300K Rads (Si) International Rectifier’s R6 technology provides TM superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for ...
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IRHNA67160 Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current ...
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... On-State Resistance (SMD-2) V Diode Forward Voltage SD Part numbers IRHNA67160 and IRHNA63160 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area ...
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IRHNA67160 1000 100 10 5.0V 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 150°C 100 25° ...
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Pre-Irradiation 14000 0V MHz C iss = SHORTED 12000 C rss = oss = 10000 C iss 8000 ...
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IRHNA67160 120 LIMITED BY PACKAGE 100 100 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE ...
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Pre-Irradiation D.U 20V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms ...
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IRHNA67160 Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á 25V, starting 25°C, L= 0.29mH Peak 56A 12V Â ≤ 56A, di/dt ≤ ...