mrfe6p3300h Freescale Semiconductor, Inc, mrfe6p3300h Datasheet - Page 2

• Manufacturer Part Number: mrfe6p3300h
• Description: Rf Power Field Effect Transistor
• Manufacturer: Freescale Semiconductor, Inc

MRFE6P3300HR3 MRFE6P3300HR5
2
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests
f1 = 857 MHz, f2 = 863 MHz
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Intermodulation Distortion
Input Return Loss
1. Each side of the device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push - pull configuration.
4. Drains are tied together internally as this is a total device value.
(V
(V
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DD
GS
DS
DS
DS
= 66 Vdc, V
= 32 Vdc, V
= 10 Vdc, I
= 32 Vdc, I
= 32 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 32 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 32 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 5 Vdc, V
= 10 Vdc, I
(3)
DS
D
D
D
(1)
(1)
(1)
(In Freescale Narrowband Test Fixture, 50 ohm system) V
GS
GS
= 350 μAdc)
(4)
= 1600 mAdc, Measured in Functional Test)
= 2.4 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
(3)
(1,2)
Characteristic
(4)
Test Methodology
(T
C
(4)
(4)
= 25°C unless otherwise noted)
GS
GS
GS
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
Symbol
V
V
V
DD
I
I
I
C
DS(on)
C
IMD
GS(th)
GS(Q)
C
G
IRL
DSS
DSS
GSS
η
oss
rss
iss
ps
D
= 32 Vdc, I
Min
DQ
—
—
—
—
—
—
—
19
41
—
—
1
2
= 1600 mA, P
- 28.8
- 18.4
0.22
1.22
20.4
44.8
3B (Minimum)
Typ
217
106
IV (Minimum)
2.2
2.8
C (Minimum)
—
—
—
Class
out
Freescale Semiconductor
= 270 W PEP,
Max
- 27
0.3
10
23
—
—
—
—
- 9
1
1
3
4
RF Device Data
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
dBc
dB
dB
pF
pF
pF
%