mrfe6p3300h Freescale Semiconductor, Inc, mrfe6p3300h Datasheet - Page 6

• Manufacturer Part Number: mrfe6p3300h
• Description: Rf Power Field Effect Transistor
• Manufacturer: Freescale Semiconductor, Inc

MRFE6P3300HR3 MRFE6P3300HR5
6
−10
−20
−30
−40
−50
−60
−70
1
Figure 7. Intermodulation Distortion Products
V
f1 = 857 MHz, f2 = 863 MHz
Two −Tone Measurements, 6 MHz Tone Spacing
DD
= 32 Vdc, I
3rd Order
7th Order
P
out
DQ
, OUTPUT POWER (WATTS) PEP
versus Output Power
= 1600 mA
10
5th Order
TYPICAL NARROWBAND CHARACTERISTICS
63
62
61
60
59
58
57
56
55
54
53
45
40
35
30
25
20
15
10
Figure 10. Single - Carrier DVBT OFDM ACPR, Power
5
0
32
1
Gain and Drain Efficiency versus Output Power
V
8K Mode OFDM, 64 QAM Data Carrier
Modulation, 5 Symbols
100
P1dB = 55.15 dBm
(327.9 W)
ACP −L
DD
ACP −U
T
Figure 9. Pulsed CW Output Power versus
C
33
P3dB = 55.9 dBm
(388.37 W)
= 32 Vdc, I
= −30_C
34
P
out
DQ
, OUTPUT POWER (WATTS) AVG.
35
= 1600 mA, f = 860 MHz
25_C
P
600
in
85_C
, INPUT POWER (dBm)
Input Power
36
P6dB = 56.28 dBm
(424.38 W)
V
Pulsed CW, 12 μsec(on), 1% Duty Cycle
f = 860 MHz
DD
10
= 32 Vdc, I
37
G
ps
−70
−10
−20
−30
−40
−50
−60
38
1
DQ
Figure 8. Intermodulation Distortion Products
V
Two −Tone Measurements
(f1 + f2)/2 = Center Frequency of 860 MHz
= 1600 mA
DD
39
η
IM3 −L
D
IM5 −U
= 32 Vdc, P
Actual
IM5 −L
40
−30_C
85_C
IM3 −U
Ideal
IM7 −U
IM7 −L
100
41
out
85_C
25_C
versus Tone Spacing
−30_C
TWO −TONE SPACING (MHz)
25_C
= 150 W (PEP), I
200
42
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
10
Freescale Semiconductor
DQ
= 1600 mA
RF Device Data
80