mrfe6p3300h Freescale Semiconductor, Inc, mrfe6p3300h Datasheet - Page 7

• Manufacturer Part Number: mrfe6p3300h
• Description: Rf Power Field Effect Transistor
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
22
21
20
19
18
17
16
15
1
Figure 11. Power Gain and Drain Efficiency
T
C
= −30_C
25_C
85_C
P
versus CW Output Power
out
, OUTPUT POWER (WATTS) CW
10
η
D
G
ps
10
10
10
10
TYPICAL NARROWBAND CHARACTERISTICS
V
I
f = 860 MHz
7
6
5
4
DQ
DD
90
Figure 13. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http:/www.freescale.com/rf. Select Tools/
Software/Application Software/Calculators to access the MTTF calcu−
lators by product.
= 1600 mA
= 32 Vdc
100
110
−30_C
130
T
J
DD
, JUNCTION TEMPERATURE (°C)
25_C
= 32 Vdc, P
85_C
800
150
70
60
50
40
30
20
10
0
out
170
= 270 W PEP, and η
190
21
20
19
18
17
16
0
Figure 12. Power Gain versus Output Power
210
I
f = 860 MHz
DQ
50
= 1600 mA
D
= 44.8%.
230
100
P
out
, OUTPUT POWER (WATTS) CW
MRFE6P3300HR3 MRFE6P3300HR5
250
150
200
250
V
DD
= 28 V
300
30 V
350
32 V
400
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