mrfe6p3300h Freescale Semiconductor, Inc, mrfe6p3300h Datasheet - Page 9

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mrfe6p3300h

Manufacturer Part Number
mrfe6p3300h
Description
Rf Power Field Effect Transistor
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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RF Device Data
Freescale Semiconductor
Figure 16. 820 - 900 MHz Narrowband Series Equivalent Source and Load Impedance
Z
o
= 10 Ω
Input
Matching
Network
Z
Z
source
load
MHz
830
845
860
875
890
V
f
DD
Z
= Test circuit impedance as measured from
= Test circuit impedance as measured
load
= 32 Vdc, I
gate to gate, balanced configuration.
from drain to drain, balanced configuration.
Z
Z
f = 890 MHz
source
source
f = 830 MHz
+
4.52 - j6.73
4.22 - j6.38
3.89 - j5.81
3.54 - j5.10
3.39 - j4.32
Z
f = 890 MHz
DQ
source
= 1600 mA, P
Ω
Device
Under
Test
f = 830 MHz
out
= 270 W PEP
Z
4.89 - j1.35
5.06 - j1.01
5.18 - j0.58
5.27 - j0.11
5.36 + j0.43
load
+
Z
load
Ω
Output
Matching
Network
MRFE6P3300HR3 MRFE6P3300HR5
9

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