mrfe6s9135h Freescale Semiconductor, Inc, mrfe6s9135h Datasheet

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mrfe6s9135h

Manufacturer Part Number
mrfe6s9135h
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
• Typical Single- Carrier W - CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, P
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for broadband commercial and industrial applications with
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
1000 mA, P
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
(3 dB Input Overdrive from Rated P
Case Temperature 80°C, 136 W CW
Case Temperature 80°C, 39 W CW
Power Gain — 21 dB
Drain Efficiency — 32.3%
Device Output Signal PAR — 6.4 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 39.5 dBc in 3.84 MHz Channel Bandwidth
calculators by product.
Select Documentation/Application Notes - AN1955.
out
= 39 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
(1,2)
Characteristic
Rating
DD
out
), Designed for Enhanced Ruggedness
Operation
DD
= 28 Volts, I
out
= 180 W CW
DQ
=
Symbol
Symbol
V
R
V
T
T
DSS
T
θJC
GS
stg
Document Number: MRFE6S9135H
C
J
MRFE6S9135HR3 MRFE6S9135HSR3
CASE 465B - 03, STYLE 1
CASE 465C - 02, STYLE 1
MRFE6S9135HSR3
MRFE6S9135HR3
MRFE6S9135HSR3
MRFE6S9135HR3
940 MHz, 39 W AVG., 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 880S
SINGLE W - CDMA
NI - 880
- 65 to +150
Value
- 0.5, +66
- 0.5, +12
Value
0.39
0.48
150
225
(2,3)
Rev. 1, 11/2007
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
1

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mrfe6s9135h Summary of contents

Page 1

... RF Device Data Freescale Semiconductor = 28 Volts 180 W CW out ), Designed for Enhanced Ruggedness out Operation DD Document Number: MRFE6S9135H Rev. 1, 11/2007 MRFE6S9135HR3 MRFE6S9135HSR3 940 MHz AVG SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 880 MRFE6S9135HR3 CASE 465C - 02, STYLE 1 ...

Page 2

... Single- Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. PAR = 7 0.01% Probability on CCDF. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. MRFE6S9135HR3 MRFE6S9135HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I ...

Page 3

... Delay = 135 W CW, ΔΦ out ΔG ΔP1dB Min Typ Max = 1000 mA, 920 - 960 MHz Bandwidth — 10 — — 0.3 — — 1 — — 3.6 — — 19 — — 0.015 — — 0.01 — MRFE6S9135HR3 MRFE6S9135HSR3 Unit MHz dB ° ns ° dB/°C dBm/°C 3 ...

Page 4

... Z7, Z8 0.823″ x 0.120″ Microstrip Z9 0.060″ x 0.980″ Microstrip Z10 0.149″ x 0.980″ Microstrip Figure 1. MRFE6S9135HR3(HSR3) Test Circuit Schematic Table 5. MRFE6S9135HR3(HSR3) Test Circuit Component Designations and Values Part B1 Short RF Bead C1, C6, C15, C20, C25 39 pF Chip Capacitors C2, C14 ...

Page 5

... Figure 2. MRFE6S9135HHR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C24 C21 C22 C20 C23 C14 C11 C12 C25 C9 C10 C13 C18 C15 C16 C17 MRFE6S9135H C19 Rev. 1 MRFE6S9135HR3 MRFE6S9135HSR3 5 ...

Page 6

... Vdc 935 MHz 945 MHz DD Two−Tone Measurements OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRFE6S9135HR3 MRFE6S9135HSR3 6 TYPICAL CHARACTERISTICS Vdc (Avg.) DD out I = 1000 mA, Single−Carrier W−CDMA DQ ps 3.84 MHz Channel Bandwidth, Input Signal PAR = 7 ...

Page 7

... IM5−L 10 TWO−TONE SPACING (MHz) versus Tone Spacing 55 Ideal Actual 100 I = 1000 940 MHz 100 120 140 160 180 200 220 240 P , OUTPUT POWER (WATTS) CW out MRFE6S9135HR3 MRFE6S9135HSR3 100 ...

Page 8

... Channel Bandwidth @ ±5 MHz Offset. 0.001 Input Signal PAR = 7 0.01% Probability on CCDF 0.0001 PEAK−TO−AVERAGE (dB) Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal MRFE6S9135HR3 MRFE6S9135HSR3 8 TYPICAL CHARACTERISTICS 110 130 150 170 190 210 T , JUNCTION TEMPERATURE (° Avg., and η ...

Page 9

... MHz W 820 3.39 - j6.99 2.18 - j0.80 840 3.32 - j6.86 2.20 - j0.71 860 3.05 - j6.74 2.21 - j0.66 880 2.72 - j6.47 2.20 - j0.64 900 2.46 - j6.16 2.20 - j0.64 920 2.41 - j5.80 2.18 - j0.62 940 2.41 - j5.58 2.13 - j0.63 960 2.38 - j5.45 2.03 - j0.66 980 2.13 - j5.38 1.87 - j0. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Matching Under Test Network Z Z source load Z load W Output Matching Network MRFE6S9135HR3 MRFE6S9135HSR3 9 ...

Page 10

... D bbb (INSULATOR) bbb (LID) ccc (FLANGE) MRFE6S9135HR3 MRFE6S9135HSR3 10 PACKAGE DIMENSIONS Q 2X bbb (LID) ccc (INSULATOR) aaa SEATING ...

Page 11

... The following table summarizes revisions to this document. Revision Date 0 Nov. 2007 • Initial Release of Data Sheet 1 Nov. 2007 • Updated Fig. 12, MTTF versus Junction Temperature, to reflect a 32.3% typical efficiency rating Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRFE6S9135HR3 MRFE6S9135HSR3 11 ...

Page 12

... Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRFE6S9135HR3 MRFE6S9135HSR3 Document Number: MRFE6S9135H Rev. 1, 11/2007 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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