mrfe6s9130h Freescale Semiconductor, Inc, mrfe6s9130h Datasheet

mrfe6s9130h

Manufacturer Part Number

mrfe6s9130h

Description

Rf Power Field Effect Transistors

Manufacturer

Freescale Semiconductor, Inc

Datasheet

1.MRFE6S9130H.pdf (11 pages)

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RF Device Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier

applications.

• Typical Single - Carrier N - CDMA Performance @ 880 MHz: V

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,

Features

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V

• Integrated ESD Protection

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

Drain - Source Voltage

Gate - Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

Thermal Resistance, Junction to Case

Designed for N - CDMA, GSM and GSM EDGE base station applications

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

(Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =

1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.

Designed for Enhanced Ruggedness

Case Temperature 80°C, 130 W CW

Case Temperature 75°C, 27 W CW

Power Gain — 19.2 dB

Drain Efficiency — 30.5%

ACPR @ 750 kHz Offset — - 47.6 dBc in 30 kHz Bandwidth

the MTTF calculators by product.

Select Documentation/Application Notes - AN1955.

= 950 mA, P

out

= 27 Watts Avg., Full Frequency Band, IS - 95 CDMA

Characteristic

Rating

Operation

= 28 Volts,

Symbol

DSS

θJC

stg

Document Number: MRFE6S9130H

CASE 465A - 06, STYLE 1

MRFE6S9130HR3 MRFE6S9130HSR3

CASE 465 - 06, STYLE 1

MRFE6S9130HSR3

MRFE6S9130HR3

MRFE6S9130HSR3

MRFE6S9130HR3

880 MHz, 27 W AVG., 28 V

LATERAL N - CHANNEL

RF POWER MOSFETs

NI - 780S

NI - 780

SINGLE N - CDMA

- 65 to +150

Value

- 0.5, +66

- 0.5, +12

Value

0.45

0.51

150

200

(1,2)

Rev. 0, 4/2007

°C/W

Unit

Vdc

°C

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