mrfe6s9125n

Manufacturer Part Numbermrfe6s9125n
DescriptionRf Power Field Effect Transistors
ManufacturerFreescale Semiconductor, Inc
mrfe6s9125n datasheet
 


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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high gain and broadband performance of these de-
vices make them ideal for large-signal, common-source amplifier applications
in 28 volt base station equipment.
N - CDMA Application
• Typical Single - Carrier N - CDMA Performance @ 880 MHz, V
I
= 950 mA, P
= 27 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic
DQ
out
Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain — 20.2 dB
Drain Efficiency — 31%
ACPR @ 750 kHz Offset = - 45.7 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
GSM EDGE Application
• Typical GSM EDGE Performance: V
P
= 60 Watts Avg., Full Frequency Band (865 - 960 MHz or 920 - 960 MHz)
out
Power Gain — 20 dB
Drain Efficiency — 40%
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.8% rms
GSM Application
• Typical GSM Performance: V
= 28 Volts, I
DD
125 Watts, Full Frequency Band (920 - 960 MHz)
Power Gain — 19 dB
Drain Efficiency — 62%
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Maximum Operation Voltage
Storage Temperature Range
Case Operating Temperature
(1,2)
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 125 W CW
Case Temperature 76°C, 27 W CW
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators
by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
= 28 Volts,
DD
= 28 Volts, I
= 700 mA,
DD
DQ
= 700 mA, P
=
DQ
out
Document Number: MRFE6S9125N
Rev. 0, 10/2007
MRFE6S9125NR1
MRFE6S9125NBR1
880 MHz, 27 W AVG., 28 V
SINGLE N - CDMA, GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6S9125NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6S9125NBR1
Symbol
Value
Unit
V
- 0.5, +66
Vdc
DSS
V
- 0.5, +12
Vdc
GS
V
32, +0
Vdc
DD
T
- 65 to +150
°C
stg
T
150
°C
C
T
225
°C
J
(2,3)
Symbol
Value
Unit
R
°C/W
θJC
0.44
0.45
MRFE6S9125NR1 MRFE6S9125NBR1
1

mrfe6s9125n Summary of contents

  • Page 1

    ... RF Device Data Freescale Semiconductor = 28 Volts Volts 700 mA 700 mA out Document Number: MRFE6S9125N Rev. 0, 10/2007 MRFE6S9125NR1 MRFE6S9125NBR1 880 MHz AVG SINGLE N - CDMA, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 270 PLASTIC MRF6S9125NR1 CASE 1484 - 04, STYLE 1 ...

  • Page 2

    ... Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss 1. Part is internally input matched. MRFE6S9125NR1 MRFE6S9125NBR1 2 Rating 3 = 25°C unless otherwise noted) C Symbol ...

  • Page 3

    ... W, 920 - 960 MHz DQ out — 19 — — 62 — — — — 125 — = 950 mA, 865 - 900 MHz Bandwidth — 10 — — 0.93 — — 0.011 — — 0.205 — MRFE6S9125NR1 MRFE6S9125NBR1 Unit rms dBc dBc MHz dB dB/°C dBm/°C 3 ...

  • Page 4

    ... Microstrip Z7 0.236″ x 0.620″ Microstrip Z8 0.050″ x 0.620″ Microstrip Z9 0.238″ x 0.620″ Microstrip Figure 1. MRFE6S9125NR1(NBR1) Test Circuit Schematic Table 6. MRFE6S9125NR1(NBR1) Test Circuit Component Designations and Values Part Chip Capacitor C2 6.2 pF Chip Capacitor C3, C15 0.8 - 8.0 pF Variable Capacitors, Gigatrim ...

  • Page 5

    ... C10 C1 Figure 2. MRFE6S9125NR1(NBR1) Test Circuit Component Layout RF Device Data Freescale Semiconductor C8 C7 C20 C21 C6 C19 R2 C18 C4 R1 C11 C14 L2 L1 C13 C2 C12 C5 C3 C22 V DD C23 C17 C16 C15 900 MHz TO272 WB Rev. 0 MRFE6S9125NR1 MRFE6S9125NBR1 5 ...

  • Page 6

    ... Vdc 880 MHz 880.1 MHz DD Two−Tone Measurements OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRFE6S9125NR1 MRFE6S9125NBR1 6 TYPICAL CHARACTERISTICS Vdc (Avg.) DD out I = 950 mA, N−CDMA IS−95 DQ Pilot, Sync, Paging, Traffic Codes ...

  • Page 7

    ... W (PEP) DD out = 950 mA, Two−Tone Measurements IM5−U IM5−L 10 TWO−TONE SPACING (MHz) versus Tone Spacing Ideal Actual −10 −20 85_C 25_C −30 85_C −40 25_C −30_C −50 85_C −30_C −60 85_C −70 25_C −80 100 200 MRFE6S9125NR1 MRFE6S9125NBR1 80 7 ...

  • Page 8

    ... −30_C 85_C 25_C η OUTPUT POWER (WATTS) CW out Figure 11. Power Gain and Drain Efficiency versus CW Output Power MRFE6S9125NR1 MRFE6S9125NBR1 8 TYPICAL CHARACTERISTICS 80 21 −30_C 70 25_C 20 60 85_C Vdc 950 mA DQ ...

  • Page 9

    ... FREQUENCY (MHz) MRFE6S9125NR1 MRFE6S9125NBR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . ...

  • Page 10

    ... MHz Z Z Figure 16. Series Equivalent Source and Load Impedance MRFE6S9125NR1 MRFE6S9125NBR1 900 MHz Z load f = 860 MHz = 5 Ω source f = 860 MHz Vdc 950 mA Avg out source load MHz Ω Ω 860 0.62 - j2.13 1.48 - j0.14 865 0.64 - j2.31 1.56 - j0.09 870 0.62 - j2.45 1.66 - j0.02 875 ...

  • Page 11

    ... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRFE6S9125NR1 MRFE6S9125NBR1 11 ...

  • Page 12

    ... MRFE6S9125NR1 MRFE6S9125NBR1 12 RF Device Data Freescale Semiconductor ...

  • Page 13

    ... RF Device Data Freescale Semiconductor MRFE6S9125NR1 MRFE6S9125NBR1 13 ...

  • Page 14

    ... MRFE6S9125NR1 MRFE6S9125NBR1 14 RF Device Data Freescale Semiconductor ...

  • Page 15

    ... RF Device Data Freescale Semiconductor MRFE6S9125NR1 MRFE6S9125NBR1 15 ...

  • Page 16

    ... MRFE6S9125NR1 MRFE6S9125NBR1 16 RF Device Data Freescale Semiconductor ...

  • Page 17

    ... AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Oct. 2007 • Initial Release of Data Sheet RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRFE6S9125NR1 MRFE6S9125NBR1 17 ...

  • Page 18

    ... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRFE6S9125NR1 MRFE6S9125NBR1 Document Number: MRFE6S9125N Rev. 0, 10/2007 18 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...