mrf373r1 Freescale Semiconductor, Inc, mrf373r1 Datasheet

no-image

mrf373r1

Manufacturer Part Number
mrf373r1
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet
©
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
cies from 470 – 860 MHz. The high gain and broadband performance of these
devices make them ideal for large–signal, common source amplifier applica-
tions in 28 volt transmitter equipment.
• Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture
• Typical Performance at 860 MHz, 28 Volts, Broadband Push–Pull Fixture
• Excellent Thermal Stability
• 100% Tested for Load Mismatch Stress at All
• In Tape and Reel. R1 = 500 units per 32 mm,
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
REV 6
Motorola, Inc. 2002
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Drain Current – Continuous
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Designed for broadband commercial and industrial applications with frequen-
Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz,
60 Watts CW
13 inch Reel.
Derate above 25°C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power – 60 Watts
Power Gain – 13 dB
Efficiency – 50%
Output Power – 100 Watts (PEP)
Power Gain – 11.2 dB
Efficiency – 40%
IMD – –30 dBc
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2 005
C
= 25°C
Characteristic
Rating
MRF373SR1
MRF373SR1
MRF373R1
Symbol
Symbol
V
R
R
V
T
P
DSS
T
I
θJC
θJC
GS
stg
D
D
J
MRF373SR1
470 – 860 MHz, 60 W, 28 V
MRF373R1
LATERAL N–CHANNEL
RF POWER MOSFETS
CASE 360B–05, STYLE 1
CASE 360C–05, STYLE 1
– 65 to +150
BROADBAND
MRF373SR1
Value
MRF373R1
1.33
Max
0.75
MRF373R1 MRF373SR1
±20
173
200
65
NI–360S
7
1
NI–360
Order this document
by MRF373/D
Archived 2005
W/°C
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Adc
°C
°C
W
1

Related parts for mrf373r1

mrf373r1 Summary of contents

Page 1

... Symbol Value V 65 DSS V ± MRF373SR1 P 173 D 1.33 T – +150 stg T 200 J Symbol Max MRF373SR1 R 0.75 θJC MRF373R1 R 1 θJC MRF373R1 MRF373SR1 Order this document by MRF373/D Unit Vdc Vdc Adc W W/°C °C °C Unit °C/W °C/W 1 Archived 2005 ...

Page 2

... W PEP 400 mA, DD out 860.0 MHz 866 MHz) Third Order Intermodulation Distortion ( Vdc 100 W PEP 400 mA, DD out 860.0 MHz 866 MHz) MRF373R1 MRF373SR1 2 = 25°C unless otherwise noted) Symbol Min V 65 (BR)DSS I – DSS I – GSS V ...

Page 3

... Coilcraft P/N B07T R1 1.2 kΩ, Vishay Dale Chip Resistor (1206 kΩ, Vishay Dale Chip Resistor (1206) Figure 1. Single–Ended Narrowband Test Circuit Schematic (MRF373R1) Figure 2. Single–Ended Narrowband Test Circuit Layout MOTOROLA RF DEVICE DATA Connectors N–Type (female), M/A Com P/N 3052–1648–10 PCB MRF373 Printed Circuit Board Rev 01, CuClad 250 (GX– ...

Page 4

... ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2 005 Figure 3. MRF373R1 Narrowband Test Fixture Photo C1 pF, B Case Chip Capacitor, ATC C3 12 pF, B Case Chip Capacitor, ATC C4, C11 0.8 pF, B Case Chip Capacitor, ATC C5, C10 68 pF, B Case Chip Capacitor, ATC C6 0.3 pF, B Case Chip Capacitor, ATC C7 15 pF, B Case Chip Capacitor, ATC ...

Page 5

... ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2 005 Figure 5. Single–Ended Narrowband Test Circuit Layout Figure 6. MRF373SR1 Narrowband Test Circuit Photo MOTOROLA RF DEVICE DATA (Suitable for Use with MRF373SR1) MRF373S MRF373R1 MRF373SR1 5 Archived 2005 ...

Page 6

... ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2 005 TYPICAL CHARACTERISTICS FOR MRF373R1 IN SINGLE–ENDED FIXTURE Figure 7. Power Gain versus Output Power Table 1. Common Source S–Parameters ( ∠ φ MHz 11 400 0.921 182 450 0.922 181 500 0.924 180 550 0.926 179 600 ...

Page 7

... ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2 005 Figure 10. MRF373SR1 Broadband Push–Pull Component Layout MOTOROLA RF DEVICE DATA MRF373S Vertical Balun Mounting Detail MRF373R1 MRF373SR1 7 Archived 2005 ...

Page 8

... C16A, B C17A, B, C19A, B L1A, B, L3A, B, L4, L5 L2, L6 R1A, B R2A R5T PCB Balun A, B MRF373R1 MRF373SR1 8 Description 1.0 pF, AVX, P12101J1R0BBT 10 pF, AVX, P12101J100GBT 120 pF, 300 V, AVX, AQ149M121JAJBE 12 pF, AVX, P12101J120GBT 18 pF, AVX, P12101J180GBT 6.8 pF, AVX, P12101J6R8BBT 4.7 pF, AVX, P12101J4R7BBT 3.3 pF, AVX, P12101J3R3BBT 100 pF, 500 V, AVX, AQ147M101JAJBE 2 ...

Page 9

... TYPICAL TWO–TONE BROADBAND CHARACTERISTICS D Figure 11. Intermodulation Distortion versus Output Power (MRF373S Broadband Push–Pull Fixture) MOTOROLA RF DEVICE DATA D Figure 12. Broadband Power Gain versus Output Power (MRF373S Broadband Push–Pull Fixture) D Figure 13. Efficiency versus Output Power (MRF373S Broadband Push–Pull Fixture) MRF373R1 MRF373SR1 9 Archived 2005 ...

Page 10

... ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2 005 MRF373R1 MRF373SR1 10 NOTES MOTOROLA RF DEVICE DATA Archived 2005 ...

Page 11

... ISSUE D NI–360S MRF373SR1 INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc MRF373R1 MRF373SR1 11 Archived 2005 ...

Page 12

... JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF373R1 MRF373SR1 ◊ 12 MOTOROLA RF DEVICE DATA ...

Related keywords