mrf7s35015hs Freescale Semiconductor, Inc, mrf7s35015hs Datasheet
mrf7s35015hs
Available stocks
Related parts for mrf7s35015hs
mrf7s35015hs Summary of contents
Page 1
... Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor = 50 mA Volts 150 mA Bursts, 4 Document Number: MRF7S35015HS Rev. 1, 8/2008 MRF7S35015HSR3 3100 - 3500 MHz PEAK PULSED LATERAL N - CHANNEL RF POWER MOSFET CASE 465J - 02, STYLE 400S - 240 Symbol Value Unit ...
Page 2
... MHz and f = 3500 MHz, Pulsed, 100 μsec Pulse Width, 20% Duty Cycle Input Rise Time Output Pulse Droop (500 μsec Pulse Width, 10% Duty Cycle) Load Mismatch Tolerance (VSWR = 10:1 at all Phase Angles) 1. Part internally matched both on input and output. MRF7S35015HSR3 2 = 25°C unless otherwise noted) C Symbol I ...
Page 3
... Z15 0.603″ x 0.048″ Microstrip Z16 0.063″ x 0.618″ Microstrip Z17 0.534″ x 0.040″ Microstrip Figure 1. MRF7S35015HSR3 Test Circuit Schematic Table 5. MRF7S35015HSR3 Test Circuit Component Designations and Values Part B1* Long Ferrite Bead B2, B3 Short Ferrite Beads C1 470 μ Electrolytic Capacitor C2 47 μ ...
Page 4
... C10 MRF7S35015H Rev. 1 Figure 2. MRF7S35015HSR3 Test Circuit Component Layout MRF7S35015HSR3 Device Data Freescale Semiconductor ...
Page 5
... Pulse Width = 100 μsec, Duty Cycle = 20 INPUT POWER (dBm) PULSED in Figure 6. Pulsed Output Power versus Input Power OUTPUT POWER (WATTS) PULSED out Figure 8. Pulsed Power Gain versus Output Power MRF7S35015HSR3 100 Ideal Actual ...
Page 6
... Figure 11. Pulsed Power Gain and Drain Efficiency Figure 12. Pulsed Power Gain and Drain Efficiency MRF7S35015HSR3 6 TYPICAL CHARACTERISTICS −30_C C 14 25_C 3500 MHz 85_C 13 85_C Figure 10. Pulsed Power Gain and Drain Efficiency versus Output Power — ...
Page 7
... OUTPUT POWER (dBm) out 110 130 150 170 190 210 T , JUNCTION TEMPERATURE (° Peak, Pulse Width = 100 μsec Vdc out = 41 −9 −18 −27 −36 3450 3500 18.3 12 18 17 230 250 MRF7S35015HSR3 7 ...
Page 8
... MHz Z load Figure 16. Series Equivalent Source and Load Impedance MRF7S35015HSR3 8 Z source f = 3500 MHz f = 3500 MHz Vdc mA Peak DD DQ out source load MHz W W 3100 48.6 + j16.1 5.6 - j5.2 3300 11.8 + j3.15 6.36 - j6.83 3500 6.43 - j6.79 7.41 - j15 Test circuit impedance as measured from source gate to ground ...
Page 9
... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF7S35015HSR3 9 ...
Page 10
... MRF7S35015HSR3 10 RF Device Data Freescale Semiconductor ...
Page 11
... EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 June 2008 • Initial Release of Data Sheet 1 Aug. 2008 • Added Case 465J - 02 Mechanical Outline drawing Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRF7S35015HSR3 11 ...
Page 12
... Denver, Colorado 80217 1 - 800 - 441 - 2447 303 - 675 - 2140 Fax 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF7S35015HSR3 Document Number: MRF7S35015HS Rev. 1, 8/2008 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...