mrf7s38075h Freescale Semiconductor, Inc, mrf7s38075h Datasheet
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... Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor = 30 Volts 900 mA out bursts Document Number: MRF7S38075H Rev. 0, 8/2007 MRF7S38075HR3 MRF7S38075HSR3 3400 - 3600 MHz AVG WiMAX LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 780 MRF7S38075HR3 CASE 465A - 06, STYLE 1 ...
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... MHz, WiMAX Signal, 802.16d, 7 MHz Channel Bandwidth, 64 QAM measured in 0.5 MHz Channel Bandwidth @ ±5.25 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. MRF7S38075HR3 MRF7S38075HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I ...
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... MHz Bandwidth — 20 — — 0.36 — — 3.21 — — 2.38 — — 63.4 — — 0.025 — — 0.026 — MRF7S38075HR3 MRF7S38075HSR3 Unit dBc dB % rms MHz dB ° ns ° dB/°C dBm/°C 3 ...
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... Z10 0.110″ x 0.600″ Microstrip Z11 0.802″ x 0.150″ Microstrip Z12 0.150″ x 0.155″ Microstrip Figure 1. MRF7S38075HR3(HSR3) Test Circuit Schematic Table 5. MRF7S38075HR3(HSR3) Test Circuit Component Designations and Values Part B1, B2 Small Ferrite Beads C1, C2, C4, C6 2.7 pF Chip Capacitors C3, C7 ...
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... C12 Figure 2. MRF7S38075HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C2 C6 C10 C11 C4 MRF7S38705 Rev. C MRF7S38075HR3 MRF7S38075HSR3 5 ...
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... 3495 MHz 3505 MHz Two −Tone Measurements, 10 MHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRF7S38075HR3 MRF7S38075HSR3 6 TYPICAL CHARACTERISTICS Vdc (Avg.), I = 900 mA, 802.16d DD out QAM ...
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... IM5 −U IM5 −L IM7 −L 10 TWO −TONE SPACING (MHz) versus Tone Spacing −25 η D −30 −35 ACPR −40 −45 −50 −55 −60 100 I = 900 3500 MHz OUTPUT POWER (WATTS) CW out MRF7S38075HR3 MRF7S38075HSR3 100 120 7 ...
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... QAM , 4 Bursts, 7 MHz 4 Channel Bandwidth, Input Signal 0.001 PAR = 9 0.01% Probability on CCDF 0.0001 PEAK −TO−AVERAGE (dB) Figure 13. OFDM 802.16d Test Signal MRF7S38075HR3 MRF7S38075HSR3 8 TYPICAL CHARACTERISTICS 110 130 150 170 190 210 T , JUNCTION TEMPERATURE (° Avg., and η Vdc ...
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... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Matching Test Network Z Z source load f = 3400 MHz load W Output Matching Network MRF7S38075HR3 MRF7S38075HSR3 9 ...
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... (FLANGE (FLANGE (FLANGE) D bbb (LID) M (INSULATOR (FLANGE) MRF7S38075HR3 MRF7S38075HSR3 10 PACKAGE DIMENSIONS Q 2X bbb (INSULATOR) bbb ccc (LID) aaa ccc ...
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... AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Aug. 2007 • Initial Release of Data Sheet RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRF7S38075HR3 MRF7S38075HSR3 11 ...
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... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF7S38075HR3 MRF7S38075HSR3 Document Number: MRF7S38075H Rev. 0, 8/2007 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...